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Shanghai Lunsure Electronic...
Chenyi Electronics
CHENYI[Shanghai Lunsure Electronic Tech]
上海朗硕科技有限公司
Shanghai LUNSURE Electronic Technology Co., Ltd.
涓?捣???绉????????
Shanghai Lunsure Electr...
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| Part No. |
MMBZ5235B MMBZ5250B MMBZ5243B MMBZ5252B MMBZ5245B MMBZ5240B MMBZ5226B MMBZ52 MMBZ5254B MMBZ5257B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5230B MMBZ5231B MMBZ5232B MMBZ5233B MMBZ5234B MMBZ5236B MMBZ5237B MMBZ5238B MMBZ5239B MMBZ5241B MMBZ5242B MMBZ5244B MMBZ5246B MMBZ5247B MMBZ5248B MMBZ5249B MMBZ5251B MMBZ5253B MMBZ5255B MMBZ5256B MMBZ52-SERIES
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| Description |
Surface nount zener diode. 350 mW. Nominal zen. vltg @ Izt Vz 11 V. Test current 20.0 mA.
Surface nount zener diode. 350 mW. Nominal zen. vltg @ Izt Vz 10 V. Test current 20.0 mA.
Surface nount zener diode. 350 mW. Nominal zen. vltg @ Izt Vz 8.7 V. Test current 20.0 mA.
Surface nount zener diode. 350 mW. Nominal zen. vltg @ Izt Vz 7.5 V. Test current 20.0 mA.
Surface nount zener diode. 350 mW. Nominal zen. vltg @ Izt Vz 4.3 V. Test current 20.0 mA.
3-26V Dual Operational Amplifier, Ta = -40 to 105°C; Package: 8 LEAD PDIP; No of Pins: 8; Container: Rail; Qty per Container: 50
5-30V Single Comparator, Ta = -25 to 85°C- Pb-free; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Rail; Qty per Container: 98
2-36V Dual Comparator, Ta= -40 to 125°C; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Rail; Qty per Container: 98
0.5A, 5V, 52kHz Buck PWM Switching Regulator; Package: 8 LEAD PDIP; No of Pins: 8; Container: Rail; Qty per Container: 50 表面贴装稳压二极
3-26V Quad Operational Amplifier, Ta= -40 to 105°C - Pb-free; Package: SOIC 14 LEAD; No of Pins: 14; Container: Tape and Reel; Qty per Container: 2500 表面贴装稳压二极
Small Signal Bias Resistor Transistor SC75 NPN 50V; Package: SC-75 (SOT-416) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000
Ultra High Speed Switching Diode SC88; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000
Surface nount zener diode. 350 mW. Nominal zen. vltg @ Izt Vz 6.2 V. Test current 20.0 mA.
Surface nount zener diode. 350 mW. Nominal zen. vltg @ Izt Vz 5.6 V. Test current 20.0 mA.
SURFACE MOUNT ZENER DIODES
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| File Size |
20.84K /
1 Page |
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it Online |
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VICOR[Vicor Corporation]
DC/DC变换
Vicor, Corp.
Analog Devices, Inc.
Maxim Integrated Products, Inc.
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| Part No. |
MI-J21-IA MI-J21-IZ MI-J21-MZ MI-J7N-IZ MI-J7N-MY MI-J2L-MY MI-J22-MA MI-J20-MA MI-J20-MY MI-J20-MZ MI-J2M-IA MI-J2M-IY MI-J2M-IZ MI-J2L-MA MI-J2L-MZ MI-J22-MY MI-J22-MZ MI-J51-MA MI-J51-MY MI-J51-MZ MI-J7Z-MZ MI-J00 MI-J20-IA MI-J20-IY MI-J20-IZ MI-J21-IY MI-J21-MA MI-J21-MY MI-J22-IA MI-J22-IY MI-J22-IZ MI-J23-IA MI-J23-IY MI-J23-IZ MI-J23-MA MI-J23-MY MI-J23-MZ MI-J24-IA MI-J24-IY MI-J24-IZ MI-J24-MA MI-J24-MY MI-J24-MZ MI-J2J-IA MI-J2J-IY MI-J2J-IZ MI-J2J-MA MI-J2J-MY MI-J2J-MZ MI-J2K-IA MI-J2K-IY MI-J2K-IZ MI-J2K-MA MI-J2K-MY MI-J2K-MZ MI-J2L-IA MI-J2L-IY MI-J2L-IZ MI-J2M-MA MI-J2M-MY MI-J2M-MZ MI-J2N-IA MI-J2N-IY MI-J2N-IZ MI-J2N-MA MI-J2N-MY MI-J2N-MZ MI-J2P-IA MI-J2P-IY MI-J2P-IZ MI-J2P-MA MI-J2P-MY MI-J2P-MZ MI-J2R-IA MI-J2R-IY MI-J2R-IZ MI-J2R-MA MI-J2R-MY MI-J2R-MZ MI-J2T-IA MI-J2T-IY MI-J2T-IZ MI-J2T-MA MI-J2T-MY MI-J2T-MZ MI-J2V-IA MI-J2V-IY MI-J2V-IZ MI-J2V-MA MI-J2V-MY MI-J2V-MZ MI-J2W-IA MI-J2W-IY MI-J2W-IZ MI-J2W-MA MI-J2W-MY MI-J2W-MZ MI-J2X-IA MI-J2X-IY MI-J2X-IZ MI-J2X-MA MI-J2X-MY MI-J2X-MZ MI-J2Y-IA MI-J2Y-IY MI-J2Y-IZ MI-J2Y-MA MI-J2Y-MY MI-J2Y-MZ MI-J2Z-IA MI-J2Z-IY MI-J2Z-IZ MI-J2Z-MA MI-J2Z-MY MI-J2Z-MZ MI-J50-IA MI-J50-IY MI-J50-IZ MI-J50-MA MI-J50-MY MI-
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| Description |
RES,Wirewound,2KOhms,65WV,5 /-% Tol
GT 8C 8#16 SKT RECP WALL
RESISTOR SILICONE 12 OHM 10W
RESISTOR SILICONE 15 OHM 10W
XCR3032XL-10VQG44I
Flash 16Mb PROM (ST Micro),
Flash 32Mb PROM (ST Micro),
Bar Graph Display; Display Technology:LED; Package/Case:20-DIP; Color:High Efficiency Red; Forward Voltage:2.2V; Light Emitting Area:10 segments
Bar Graph Display; Display Technology:LED; Package/Case:20-DIP; Color:High Efficiency Red; Forward Voltage:2.0V; Light Emitting Area:10 segments
Gate / Inverter Logic IC; Logic Type:Dual 4-Input NOR Gate; Logic Family:4000; Logic Base Number:4002; Package/Case:14-DIP
BACKSHELL DB37 METALIZED PLASTIC
Replaced by PTN78000A,PTN04050C :
FLUKE-117 CALIBRATED BY NEWARK INONE SERVICES
HVAC Digital Multimeter and Infrared Thermometer Combo Kit; RoHS Compliant: NA
Bipolar Transistor; Collector Emitter Voltage, Vceo:800V; Transistor Polarity:NPN; Power Dissipation:70W; C-E Breakdown Voltage:1500V; DC Current Gain Min (hfe):5; Collector Current:8A; Package/Case:3-TO-3PML
RESISTOR WIREWOUND 390 OHM 10W
RF/Coaxial Connector; RF Coax Type:SMA; Contact Termination:Crimp; Body Style:Right Angle Plug; RG Cable Type:58, 58A, 58C, 141, 303, LMR195, Belden 7806A RoHS Compliant: Yes
RESISTOR WIREWOUND 35 OHM 10W
T-PNP-SI QUAD GEN PURPOSE
T-NPN-SI-QUAD GEN PURP
Amplifier, Other
Bipolar Transistor; Current Rating:150mA; Voltage Rating:24V
KPT 3C 3#20 SKT RECP
D-SI 70PRV .1A
Gate Logic IC; Logic Type:Gate; Logic Family:4000; Logic Base Number:4001; Package/Case:14-DIP; Number of Circuits:4; Mounting Type:Through Hole RoHS Compliant: Yes
Darlington Bipolar Transistor; Mounting Type:Through Hole; Package/Case:TO-3; Current Rating:12A; Voltage Rating:100V RoHS Compliant: Yes
Darlington Bipolar Transistor; Package/Case:TO-3; Mounting Type:Through Hole; Current Rating:12A; Voltage Rating:100V
Thyristor; Current Rating:8A; Mounting Type:Through Hole; Package/Case:TO-64; Current, It av:8A; Repetitive Reverse Voltage Max, Vrrm:400V; Voltage Rating:400V
Bipolar Transistor; Transistor Polarity:N Channel; C-E Breakdown Voltage:850V; DC Current Gain Min (hfe):5; Collector Current:15A; Package/Case:TO-3; Voltage Rating:450V
Small Signal Bipolar Transistor; Collector Emitter Voltage, Vceo:80V; Transistor Polarity:N Channel; Power Dissipation:0.8W; C-E Breakdown Voltage:80V; DC Current Gain Min (hfe):15; Collector Current:1A; Package/Case:TO-39
Bipolar Transistor; Transistor Polarity:PNP; Power Dissipation:5W; C-E Breakdown Voltage:320V; DC Current Gain Min (hfe):15; Collector Current:10A
IC; Package/Case:12-lead quad in-line
T-NPN-SI GEN PURP AMP
Bipolar Transistor; Collector Emitter Voltage, Vceo:24V; Transistor Polarity:PNP; C-E Breakdown Voltage:12V; DC Current Gain Min (hfe):110; Collector Current:100mA; Package/Case:TO-5; Current Rating:0.1A; Voltage Rating:24V
T-PNP- GE-AF PREAMP-DR-PO
RESISTOR WIREWOUND 5.6K OHM 3W
Bipolar Transistor; Current Rating:1.5A; Voltage Rating:50V
T-NPN-SI-AF DRIVER
; Transistor Polarity:N Channel; C-E Breakdown Voltage:140V; DC Current Gain Min (hfe):20; Collector Current:12A; Package/Case:TO-3P; DC Current Gain Max (hfe):200; Mounting Type:Through Hole
Single Digit Seven Segment Display; Number of Digits/Alpha:1; Digit/Alpha Height:7.62mm; Color:Red; Luminous Intensity (MSCP):500ucd
LED-DISPLAY-RED RoHS Compliant: Yes
Optoisolator; Collector Emitter Voltage, Vceo:30V; Transistor Polarity:NPN; Power Dissipation:250mW; C-E Breakdown Voltage:60V; DC Current Gain Min (hfe):50000; Collector Current:125mA; Package/Case:6-DIP
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:1V; Transistor Polarity:N Channel; Power Dissipation:5W; DC Current Gain Min (hfe):25; Collector Current:400mA; DC Current Gain Max (hfe):200; Power (Ptot):5W
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-30V; Zero Gate Voltage Drain Current Min, Idss:5mA; Zero Gate Voltage Drain Current Max, Idss:15mA; Gate-Source Cutoff Voltage Max, Vgs(off):-6V; Package/Case:TO-92
Optocoupler; Optocoupler Output Type:Transistor; Isolation Voltage:1500Vrms; Package/Case:6-DIP; Mounting Type:Through Hole; C-E Breakdown Voltage:30V; DC Current Gain Min (hfe):50; Transistor Polarity:NPN
OPTOISOLATOR/DARL
NPN-Output dc-Input Optocoupler,1-CHANNEL,3.5kV ISOLATION,DIP
Optocoupler; Optocoupler Output Type:Transistor; Isolation Voltage:7500Vrms; Package/Case:6-DIP; Collector Current:0.05A; Mounting Type:Through Hole; Voltage Rating:30V; Transistor Polarity:NPN
Optocoupler; Optocoupler Output Type:Transistor; Isolation Voltage:7500Vrms; Package/Case:6-DIP; Collector Current:0.5A; Mounting Type:Through Hole; C-E Breakdown Voltage:80V; DC Current Gain Max (hfe):3.5; Transistor Polarity:NPN
Replaced by PTN04050C :
Bipolar Transistor; Package/Case:TO-3P; Current Rating:10A; Voltage Rating:800V
T-NPN-SI W/ 10K RESISTOR
T-NPN-SI COLOR TV OUTPUT
TVS UNI-DIR 64V 1500W SMC
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:300mV; Power Dissipation, Pd:0.3W; DC Current Gain Min (hfe):350; C-E Breakdown Voltage:120V; Collector Current:100mA; DC Current Gain Max (hfe):700; Power (Ptot):300mW RoHS Compliant: Yes
Bipolar Transistor; Collector Emitter Voltage, Vceo:80V; Transistor Polarity:NPN; Power Dissipation:800mW; C-E Breakdown Voltage:80V; DC Current Gain Min (hfe):1000; Collector Current:1A; Package/Case:3-TO-92
T-NPN-SI HI SPEED SWITCH
T-NPN SI- HI vltg/SPEED
Bipolar Transistor; Package/Case:TO-3P; Current Rating:6A; Voltage Rating:800V
Bipolar Transistor; Current Rating:12A; Voltage Rating:400V
Bipolar Transistor; Collector Emitter Voltage, Vceo:450V; Transistor Polarity:NPN; Power Dissipation:150W; DC Current Gain Min (hfe):10; Collector Current:15A; Package/Case:3-TO-218; Terminal Type:3; Current Rating:15A
Bipolar Transistor; Collector Emitter Voltage, Vceo:450V; Transistor Polarity:NPN; Power Dissipation:125W; Collector Current:8A; Package/Case:3-TO-218; Terminal Type:3; Current Rating:8A; Number of Cross References:81
SRAM Memory IC; Memory Type:MOS SRAM; Access Time, Tacc:55ns; Memory Configuration:4K x 1
Bipolar Transistor; Current Rating:4A; Voltage Rating:80V
milirtary DC-CD Converters 10 to 50W
TVS BIDIRECT 1500W 64V SMC
TVS UNIDIRECT 1500W 7.0V SMC
Military DC-DC Converters 10 to 50W 军事的DC - DC转换00W
CAP/ 27P 3K K CF X9S 军事的DC - DC转换00W
Military DC-DC Converters 10 to 50W 军事的DC - DC转换100W
Military DC-DC Converters 10 to 50W 军事的DC - DC转换1050W
IC; Mounting Type:Through Hole; Package/Case:9-SIP 军事的DC - DC转换00W
Military DC-DC Converters 10 to 50W 军事DC - DC转换00W
32 MCELL 3 VOLT ZERO POWER ISP CPLD - NOT RECOMMENDED for NEW DESIGN 军事的DC - DC转换00W
CONNECTOR ACCESSORY 军事的DC - DC转换00W
FLUKE-116 CALIBRATED BY NEWARK INONE SERVICES RoHS Compliant: NA 军事的DC - DC转换00W
Flash 16Mb PROM (ST Micro) 军事的DC - DC转换00W
Bipolar Transistor; Collector Emitter Voltage, Vceo:30V; Power Dissipation, Pd:625mW; DC Current Gain Min (hfe):50; C-E Breakdown Voltage:30V; Collector Current:300mA; DC Current Gain Max (hfe):800; Power (Ptot):750mW 军事的DC - DC转换00W
GT 8C 8#16 PIN RECP WALL 军事的DC - DC转换00W
Gate Logic IC; Logic Type:Gate; Logic Family:4000; Logic Base Number:4011; Package/Case:14-DIP; Number of Circuits:4; Mounting Type:Through Hole 军事的DC - DC转换00W
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:8mA 军事的DC - DC转换00W
Thyristor; Current Rating:10A; Mounting Type:Through Hole; Package/Case:TO-220; Current, It av:10A; Repetitive Reverse Voltage Max, Vrrm:600V; Voltage Rating:600V RoHS Compliant: Yes 军事的DC - DC转换00W
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| File Size |
83.54K /
2 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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