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H&M Semiconductor
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| Part No. |
HM6N70F
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| OCR Text |
vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. the transistor can be used in various power switching circuit for system mini... |
| Description |
silicon N-channel Enhanced vdmosfets
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| File Size |
1,045.41K /
10 Page |
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