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Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
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| Part No. |
2931-150
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| OCR Text |
...ly matched, COMMON BASE bipolar transistor capable of providing 150 Watts of pulsed RF output power at 50s pulse width, 4% duty factor across the 2900 to 3100 MHz band. The transistor prematch and test fixture has been optimized through the... |
| Description |
150 Watts, 38 Volts, 50us, 4% Radar 2900-3100 MHz
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| File Size |
91.80K /
4 Page |
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Microsemi
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| Part No. |
2931-150
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| OCR Text |
...ly matched, common base bipolar transistor capable of providing 150 watts of pulsed rf output power at 50s pulse width, 4% duty factor across the 2900 to 3100 mhz band. the transistor prematch and test fixture has been optimized thro... |
| Description |
Pulsed Power S-Band (Si)
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| File Size |
95.06K /
4 Page |
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HVVi Semiconductors, Inc.
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| Part No. |
HVV0912-150 HVV0912-150-EK
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| OCR Text |
Transistor 960-1215 MHz, 10s Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications
FeatuRes
* Silicon MOSFET Technolog...150
20
43
-5
Table 1: Typical RF Performance in broadband text fixture at 25C temperatur... |
| Description |
L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications
L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10レs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications
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| File Size |
816.62K /
5 Page |
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it Online |
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Microsemi
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| Part No. |
2729GN-150
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| OCR Text |
...on source, class ab gan on sic transistor capable of providing 13db gain, 150 watts of pulsed rf output power at 100s pulse width, 10% duty factor across the 2700 to 2900 mhz band. the transistor has internal pre-match for optimal perfor... |
| Description |
GaN Transistors
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| File Size |
119.88K /
5 Page |
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it Online |
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MACOM[Tyco Electronics]
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| Part No. |
PH2729-150 PH2729-150M
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| OCR Text |
Transistor--150 Watts 2.7-2.9 GHz, 100s Pulse, 10% Duty
Features
* * * * * * * * NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballast... |
| Description |
Radar Pulsed Power transistor-150 Watts 2.7-2.9 GHz/ 100ms Pulse/ 10% Duty
Radar Pulsed Power transistor-150 Watts 2.7-2.9 GHz 100ms Pulse 10% Duty
Radar Pulsed Power transistor-150 Watts 2.7-2.9 GHz, 100ms Pulse, 10% Duty
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| File Size |
79.05K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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