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Fairchild Semiconductor, Corp.
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| Part No. |
irf610a
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| OCR Text |
...S(ON) : 1.169 (Typ.)
1 2 3
irf610a
BVDSS = 200 V RDS(on) = 1.5 ID = 3.3 A
TO-220
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Volta... |
| Description |
Advanced Power MOSFET
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为200V，导通电阻为1.5Ω，漏电流.3A 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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