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For developmental Found Datasheets File :: 1156    Search Time::3.265ms    
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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ...m integrated circuits. Formerly developmental type TA17413. January 1998 Features * 8.1A and 6.5A, 275V and 250V * rDS(ON) = 0.45 and 0.68 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switchin...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ...m integrated circuits. Formerly developmental type TA17423. January 1998 Features * 14A and 13A, 275V and 250V * rDS(ON) = 0.28 and 0.34 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching ...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text ...m integrated circuits. Formerly developmental type TA49230. Features * -25A, -100V * rDS(ON) = 0.150 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristic...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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    IRF9520 FN2281

INTERSIL[Intersil Corporation]
Part No. IRF9520 FN2281
OCR Text ...m integrated circuits. Formerly developmental type TA17501. Features * 6A, 100V * rDS(ON) = 0.600 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics *...
Description 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET

File Size 57.36K  /  7 Page

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    IRF9540 RF1S9540SM FN2282

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. IRF9540 RF1S9540SM FN2282
OCR Text ...m integrated circuits. Formerly developmental Type TA17521. Features * 19A, 100V * rDS(ON) = 0.200 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics ...
Description 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs
From old datasheet system

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    IRF9620 FN2283

INTERSIL[Intersil Corporation]
Part No. IRF9620 FN2283
OCR Text ...m integrated circuits. Formerly developmental type TA17502. Features * 3.5A, 200V * rDS(ON) = 1.500 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics...
Description 3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET
3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET
3.5A 200V 1.500 Ohm P-Channel Power MOSFET
From old datasheet system

File Size 57.96K  /  7 Page

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    FDS2582

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FDS2582
OCR Text ...motive Load Control Formerly developmental type 82855 * Electronic Valve Train Systems Branding Dash 5 5 4 3 2 1 6 7 1 2 3 4 8 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDSS VGS Parameter Dra...
Description Discrete Commercial N-Channel UltraFET TRENCH MOSFET, 150V, 4.5A, 0.060 Ohm @ Vgs = 10V, SO-8 Package
12 AMP MINIATURE POWER RELAY
N-Channel PowerTrench MOSFET 150V/ 4.1A/ 66m
N-Channel PowerTrench MOSFET 150V, 4.1A, 66mз
N-Channel PowerTrench MOSFET 150V, 4.1A, 66m?/a>

File Size 215.08K  /  11 Page

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    HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723

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FAIRCHILD[Fairchild Semiconductor]
INTERSIL[Intersil Corporation]
Fairchild Semiconductor Corporation
Part No. HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723
OCR Text ...relays and contactors. Formerly developmental type TA49050. Features * 40A, 600V at TC = 25oC * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC * Short Circuit Rated * Low Conducti...
Description 40A/ 600V/ UFS Series N-Channel IGBTs
40A, 600V, UFS Series N-Channel IGBTs
From old datasheet system
XC9536-6VQ44C - NOT RECOMMENDED for NEW DESIGN
40 A, 600 V, N-CHANNEL IGBT

File Size 137.79K  /  6 Page

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    HGT1S20N60C3R HGT1S20N60C3RS HGTG20N60C3R HGTP20N60C3R

FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S20N60C3R HGT1S20N60C3RS HGTG20N60C3R HGTP20N60C3R
OCR Text ...s the IGBT under test. Formerly developmental Type TA49047. January 1997 Features * 40A, 600V TJ = 25oC * 600V Switching SOA Capability * Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . 330ns * Short Circuit Rating at TJ = ...
Description 40A/ 600V/ Rugged UFS Series N-Channel IGBTs
40A, 600V, Rugged UFS Series N-Channel IGBTs

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    HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT1S20N60C3S9A

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT1S20N60C3S9A
OCR Text ...relays and contactors. Formerly developmental type TA49178. Features * 45A, 600V, TC = 25oC * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC * Short Circuit Rating * Low Conduction L...
Description 45 A, 600 V, UFS N-Channel IGBT
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53 45 A, 600 V, N-CHANNEL IGBT, TO-263AB
45A, 600V, UFS Series N-Channel IGBT 5A00V的,的ufs系列N沟道IGBT

File Size 141.01K  /  8 Page

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