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MOTOROLA[Motorola, Inc]
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| Part No. |
AN211A
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| OCR Text |
...However the oxide is subject to contamination by sodium ions which are found in varying quantities in all environments. Such contamination results in long term instability and changes in device characteristics. Silicon nitride is impervious... |
| Description |
FIFELD EFFECT TRANSISTORS IN THEORY AND PRACTICE
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| File Size |
327.70K /
12 Page |
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it Online |
Download Datasheet
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IRF[International Rectifier]
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| Part No. |
IRG4CC71KB
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| OCR Text |
...in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C
Die Outline
www.irf.com
11/28/05
IRG4CC71KB
Additional Testing and Screening For Customers requiring pr... |
| Description |
IRG4CC71KB IGBT Die in Wafer Form
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| File Size |
75.92K /
2 Page |
View
it Online |
Download Datasheet
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Price and Availability
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