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STMicroelectronics N.V.
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| Part No. |
STB140NF55
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| OCR Text |
... for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications motor control high current, swit ching application internal schematic diagram... |
| Description |
N-channel 55V - 0.0065- 80A - D2PAK - I2PAK - TO-220 STripFETII Power MOSFET N沟道55V 0.0065 80A采用D2PAK - I2PAK -到二220 STripFET⑩功率MOSFET
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| File Size |
452.87K /
15 Page |
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International Rectifier, Corp.
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| Part No. |
IRFY130CM
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| OCR Text |
... voltage 20 v e as single pulse avalance energy ? 69 mj i ar avalance current ? 14.4 a e ar repetitive avalanche energy ? 7.5 mj dv/dt peak diode recover y dv/dt ? 5.5 v/ns t j operating junction -55 to 150 t stg storage temperature ran... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14.4A) 功率MOSFET N沟道（BVdss \u003d 100V的，的Rds（on）\u003d 0.18ohm，身份证\u003d 14.4A
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| File Size |
294.72K /
6 Page |
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it Online |
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International Rectifier, Corp.
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| Part No. |
IRFY044CM
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| OCR Text |
...v oltage 20 v e as single pulse avalance energy ? 100 mj i ar avalance current ? 16* a e ar repetitive avalanche energy ? 10 mj dv/dt peak diode recovery dv/dt ? 4.5 v/ns t j operating junction -55 to 150 t stg storage temperature rang... |
| Description |
60V 0.040Ω N-Channel HEXFET Power MOSFET(60V 0.040Ω N沟道 HEXFET 功率 MOS场效应管) 60V.040ΩN沟道HEXFET功率MOSFET60V.040Ω沟道的HEXFET功率马鞍山场效应管）
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| File Size |
142.06K /
6 Page |
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it Online |
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International Rectifier, Corp.
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| Part No. |
IRFY440CM
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| OCR Text |
... voltage 20 v e as single pulse avalance energy ? 510 mj i ar avalance current ? 7.0 a e ar repetitive avalanche energy ? 10 mj dv/dt peak diode recovery dv/dt ? 3.5 v/ns t j operating junction -55 to 150 t stg storage temperature range... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.85ohm, Id=7.0A) 功率MOSFET N沟道（BVdss \u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 7.0A
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| File Size |
262.88K /
6 Page |
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it Online |
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Toshiba, Corp.
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| Part No. |
IRFY440CMSCS
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| OCR Text |
... voltage 20 v e as single pulse avalance energy ? 510 mj i ar avalance current ? 7.0 a e ar repetitive avalanche energy ? 10 mj dv/dt peak diode recovery dv/dt ? 3.5 v/ns t j operating junction -55 to 150 t stg storage temperature range... |
| Description |
7 A, 500 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
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| File Size |
162.51K /
6 Page |
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it Online |
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