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NEC[NEC]
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| Part No. |
2sc5179 2sc5179-T2 2sc5179-T1
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| OCR Text |
2sc5179
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
* Low current consumption and high gain |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VC... |
| Description |
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
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| File Size |
55.86K /
12 Page |
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Duracell
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| Part No. |
NE68618-A NE68618-T1-A NE68619-T1-A
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| OCR Text |
...gistered number 2sc5180 2sc5181 2sc5179 2sc5177 2sc5178/78r package outline 18 19 30 33 39/39r symbols parameters and conditions units min typ max min typ max min typ max min typ max min typ max f t gain bandwidth product at v ce = 2 v, i ... |
| Description |
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| File Size |
257.54K /
12 Page |
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it Online |
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California Eastern Laboratories, Inc.
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| Part No. |
NE68618-T1-A NE68619-T1-A
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| OCR Text |
...gistered number 2sc5180 2sc5181 2sc5179 2sc5177 2sc5178/78r package outline 18 19 30 33 39/39r symbols parameters and conditions units min typ max min typ max min typ max min typ max min typ max f t gain bandwidth product at v ce = 2 v, i ... |
| Description |
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR 表面贴装NPN硅高频晶体管
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| File Size |
259.11K /
12 Page |
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it Online |
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