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    SSM3J113TU

Toshiba Semiconductor
Part No. SSM3J113TU
OCR Text ...49m (max) (@VGS = -2.0 V) Ron = 249m (max) (@VGS = -2.5 V) Ron = 169m (max) (@VGS = -4.0 V) 0.650.05 2.10.1 1.70.1 +0.1 0.3 -0.05 3 0.1660.05 Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-Source voltage Gate-Sour...
Description Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications
File Size 122.51K  /  6 Page

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