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For developmental Found Datasheets File :: 1080    Search Time::2.078ms    
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    RF1K49221 FN4314

INTERSIL[Intersil Corporation]
Part No. RF1K49221 FN4314
OCR Text ...an Body Model) of ESD. Formerly developmental type TA49221. Features * 2.5A, 60V * rDS(ON) = 0.130 * 2kV ESD Protected * Temperature Compensating PSPICE(R) Model * Thermal Impedance PSPICE Model * Peak Current vs Pulse Width Curve * UIS...
Description 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFETPower MOSFET
2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET⑩ Power MOSFET
From old datasheet system
2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET?Power MOSFET
2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET Power MOSFET
2.5A/ 60V/ 0.130 Ohm/ ESD Rated/ Dual N-Channel LittleFET Power MOSFET

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    RF1K49223 FN4322

INTERSIL[Intersil Corporation]
Part No. RF1K49223 FN4322
OCR Text ...m integrated circuits. Formerly developmental type TA49223. Features * 2.5A, 30V * rDS(ON) = 0.150 * Temperature Compensating PSPICE(R) Model * Thermal Impedance PSPICE Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * Rela...
Description 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFETPower MOSFET
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET Power MOSFET
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET?Power MOSFET
From old datasheet system
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET

File Size 97.11K  /  8 Page

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    RF1K49224 FN4330

INTERSIL[Intersil Corporation]
Part No. RF1K49224 FN4330
OCR Text ... intergrated circuits. Formerly developmental type TA49224. Features * 3.5A, 30V (N-Channel) 2.5A, 30V (P-Channel) * rDS(ON) = 0.060 (N-Channel) rDS(ON) = 0.150 (P-Channel) * Temperature Compensating PSPICE(R) Model * Thermal Impedance ...
Description 3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFETPower MOSFET
3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET⑩ Power MOSFET
From old datasheet system
3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET Power MOSFET
3.5A/2.5A/ 30V/ 0.060/0.150 Ohms/ Complementary LittleFET Power MOSFET

File Size 223.14K  /  14 Page

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    IRFD9120 FN2285

INTERSIL[Intersil Corporation]
Part No. IRFD9120 FN2285
OCR Text ...m integrated circuits. Formerly developmental type TA17501. Features * 1.0A, 100V * rDS(ON) = 0.6 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics *...
Description 1.0A/ 100V/ 0.6 Ohm/ P-Channel Power MOSFET
1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET
From old datasheet system

File Size 52.31K  /  6 Page

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    IRFD120

FAIRCHILD[Fairchild Semiconductor]
Part No. IRFD120
OCR Text ...m integrated circuits. Formerly developmental type TA17401. Features * 1.3A, 100V * rDS(ON) = 0.300 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics...
Description 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET

File Size 87.92K  /  7 Page

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    IRFR120 IRFU120 FN2414

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. IRFR120 IRFU120 FN2414
OCR Text ...m integrated circuits. Formerly developmental type TA09594. Features * 8.4A, 100V * rDS(ON) = 0.270 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics...
Description 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs 8.4 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
(IRFR120 / IRFU120) N-Channel Power MOSFETs
From old datasheet system

File Size 55.39K  /  7 Page

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    IRF610 FN1576

INTERSIL[Intersil Corporation]
Part No. IRF610 FN1576
OCR Text ...m integrated circuits. Formerly developmental type TA17442. Features * 3.3A, 200V * rDS(ON) = 1.500 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics...
Description 3.3A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
From old datasheet system

File Size 54.69K  /  7 Page

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    IRFP360 FN2290

INTERSIL[Intersil Corporation]
Part No. IRFP360 FN2290
OCR Text ...m integrated circuits. Formerly developmental type TA17464. Features * 23A, 400V * rDS(ON) = 0.200 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics ...
Description From old datasheet system
23A, 400V, 0.200 Ohm, N-Channel Power MOSFET

File Size 54.71K  /  7 Page

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    HGTG30N60A4D

Fairchild Semiconductor
Part No. HGTG30N60A4D
OCR Text ...h mode power supplies. Formerly developmental Type TA49345. Features * >100kHz Operation At 390V, 30A * 200kHz Operation At 390V, 18A * 600V Switching SOA Capability * Typical Fall Time . . . . . . . . . . . . . . . . . 60ns at TJ = 125...
Description 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V/ SMPS Series N-Channel IGBT with

File Size 116.30K  /  9 Page

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    HGTG30N60A4

Fairchild Semiconductor
Part No. HGTG30N60A4
OCR Text ...h mode power supplies. Formerly developmental Type TA49343. Features * >100kHz Operation at 390V, 30A * 200kHz Operation at 390V, 18A * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125o...
Description 600V, SMPS Series N-Channel IGBT

File Size 137.91K  /  8 Page

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