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contamination Datasheet PDF File

For contamination Found Datasheets File :: 1519 Search Time::3.266ms
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				International Rectifier
Part No.	IRG4CC40UB
OCR Text	...in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C Die Outline 9/24/98
Description	IRG4CC30UB IGBT Die in Wafer Form
File Size	34.15K / 1 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4CC40WB
OCR Text	...in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C Die Outline 01/17/01
Description	晶体管\| IGBT的\|正陈\| 600V的五（巴西）国际消费电子展\|芯片 IRG4CC40WB IGBT Die in Wafer Form
File Size	22.92K / 1 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4CC50FB
OCR Text	...in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C Die Outline www.irf.com 12/3/98
Description	IRG4CC50FB IGBT Die in Wafer Form
File Size	34.90K / 1 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4CC50KB
OCR Text	...in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C Die Outline 9/24/98
Description	IRG4CC50KB IGBT Die in Wafer Form
File Size	36.59K / 1 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4CC50SB
OCR Text	...in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C Die Outline www.irf.com 12/3/98
Description	IRG4CC50SB IGBT Die in Wafer Form
File Size	38.93K / 1 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4CC50UB
OCR Text	...in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C Die Outline 9/24/98
Description	IRG4CC50UB IGBT Die in Wafer Form
File Size	35.08K / 1 Page	View it Online	Download Datasheet

				Hittite Microwave Corporation International Rectifier
Part No.	IRG4CC50WB
OCR Text	...in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C Die Outline www.irf.com 01/19/01
Description	IGBT Die in Wafer Form 600 V Size 5 WARP Speed IRG4CC50WB IGBT Die in Wafer Form
File Size	23.15K / 1 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4CC58KB
OCR Text	...in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C Die Outline 3/25/99
Description	IRG4CC58KB IGBT Die in Wafer Form
File Size	40.45K / 1 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4CC60FB
OCR Text	...in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C Die Outline www.irf.com 04/26/02
Description	IRG4CC60FB IGBT Die in Wafer Form
File Size	27.19K / 1 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4CC60UB
OCR Text	...in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C Die Outline www.irf.com 04/26/02
Description	IRG4CC60UB IGBT Die in Wafer Form
File Size	27.20K / 1 Page	View it Online	Download Datasheet

For contamination Found Datasheets File :: 1519 Search Time::3.266ms
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