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For developmental Found Datasheets File :: 1156    Search Time::2.813ms    
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    HGTP14N37G3VL HGT1S14N37G3VLS HGT1S14N37G3VLS9A

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. HGTP14N37G3VL HGT1S14N37G3VLS HGT1S14N37G3VLS9A
OCR Text ...d in the gate circuit. Formerly developmental Type TA49169. Features * Logic Level Gate Drive * Internal Voltage Clamp * ESD Gate Protection * TJ = 175oC * Internal Series and Shunt Gate Resistors * Low Conduction Loss * Ignition Energy...
Description TRANS IGBT CHIP N-CH 380V 25A 3TO-263AB
14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs
TRANS PNP BIPOLAR 45V SOT323
TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 18A I(C) | TO-263AB
TRANSISTOR PNP BIPOLAR 45V SOT23

File Size 156.76K  /  6 Page

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    HGTP14N40F3VL HGT1S14N40F3VLS

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
Part No. HGTP14N40F3VL HGT1S14N40F3VLS
OCR Text ...his harsh environment. Formerly developmental Type 49023 Applications * Automotive Ignition Coil Driver Circuits * Coil-On Plug Applications Features * * * * * Logic Level Gate Drive Internal Voltage Clamp ESD Gate Protection Max TJ...
Description 14A, 380V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
330mJ, 400V, N-Channel Ignition IGBT
72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN 38 A, 420 V, N-CHANNEL IGBT, TO-220AB

File Size 116.83K  /  7 Page

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    HGTP15N120C3 HGTG15N120 HGT1S15N12 HGTG15N120C3 HGT1S15N120C3S HGT1S15N120C3

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. HGTP15N120C3 HGTG15N120 HGT1S15N12 HGTG15N120C3 HGT1S15N120C3S HGT1S15N120C3
OCR Text ...1S15N120C3S9A. G Formerly developmental Type TA49145. E Packaging JEDEC STYLE TO-247 EMITTER COLLECTOR GATE JEDEC TO-220AB (ALTERNATE VERSION) EMITTER COLLECTOR GATE COLLECTOR (FLANGE) COLLECTOR (FLANGE) JEDEC TO-...
Description 35A 1200V UFS Series N-Channel IGBTs
35A/ 1200V/ UFS Series N-Channel IGBTs
35A, 1200V, UFS Series N-Channel IGBTs 35 A, 1200 V, N-CHANNEL IGBT, TO-262AA

File Size 138.80K  /  11 Page

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    HGTP5N120BND HGTG5N120BND HGTP5N120 HGTG5N120BNDNL HGTP5N120BNDNL

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP5N120BND HGTG5N120BND HGTP5N120 HGTG5N120BNDNL HGTP5N120BNDNL
OCR Text ...relays and contactors. Formerly developmental Type TA49306. Features * 21A, 1200V, TC = 25oC * 1200V Switching SOA Capability * Typical Fall Time . . . . . . . . . . . . . . . . 175ns at TJ = 150oC * Short Circuit Rating * Low Conductio...
Description 3.3V 72-mc CPLD
21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

File Size 175.44K  /  8 Page

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    HGTP5N120BN HGT1S5N120BNS FN4599

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. HGTP5N120BN HGT1S5N120BNS FN4599
OCR Text ...relays and contactors. Formerly developmental Type TA49308. Features * 21A, 1200V, TC = 25oC * 1200V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC * Short Circuit Rating * Low Conduction...
Description From old datasheet system
21A, 1200V, NPT Series N-Channel IGBTs(21A, 1200V NPT系列N沟道绝缘栅双极型晶体
21A/ 1200V/ NPT Series N-Channel IGBTs
XC9536-7VQ44I - NOT RECOMMENDED for NEW DESIGN 21 A, 1200 V, N-CHANNEL IGBT, TO-263AB

File Size 81.48K  /  7 Page

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    HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N60B3DS9A

Fairchild Semiconductor
Part No. HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N60B3DS9A
OCR Text ...relays and contactors. Formerly developmental type TA49173. Features * 27A, 600V, TC = 25oC * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150oC * Short Circuit Rating * Low Conduction L...
Description 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB

File Size 202.82K  /  7 Page

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    HGTP5N120CN HGT1S5N120CNS FN4596

INTERSIL[Intersil Corporation]
Part No. HGTP5N120CN HGT1S5N120CNS FN4596
OCR Text ...relays and contactors. Formerly developmental Type TA49309. Features * 25A, 1200V, TC = 25oC * 1200V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150oC * Short Circuit Rating * Low Conduction...
Description From old datasheet system
25A 1200V NPT Series N-Channel IGBT
25A, 1200V, NPT Series N-Channel IGBT
25A/ 1200V/ NPT Series N-Channel IGBT

File Size 79.50K  /  7 Page

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    HGTP5N120 HGT1S5N120 HGT1S5N120BNDS FN4597 HGTP5N120BND HGTG5N120BND HGT1S5N120BNDS9A

INTERSIL[Intersil Corporation]
Part No. HGTP5N120 HGT1S5N120 HGT1S5N120BNDS FN4597 HGTP5N120BND HGTG5N120BND HGT1S5N120BNDS9A
OCR Text ...relays and contactors. Formerly developmental Type TA49306. Features * 21A, 1200V, TC = 25oC * 1200V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC * Short Circuit Rating * Low Conduction...
Description From old datasheet system
21A 1200V NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N沟道绝缘栅双极型晶体
21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21 A, 1200 V, N-CHANNEL IGBT, TO-263AB

File Size 88.17K  /  7 Page

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    IRFU110 IRFR110 FN3275

HARRIS SEMICONDUCTOR
Intersil Corporation
Part No. IRFU110 IRFR110 FN3275
OCR Text ...m integrated circuits. Formerly developmental type TA17441. Features * 4.7A, 100V * rDS(ON) = 0.540 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics...
Description From old datasheet system
4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs
(IRFR110 / IRFU110) N-Channel Power MOSFETs

File Size 59.43K  /  7 Page

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    IRFU214 IRFR214 FN3274

INTERSIL[Intersil Corporation]
Part No. IRFU214 IRFR214 FN3274
OCR Text ...m integrated circuits. Formerly developmental type TA17443. Features * 2.2A, 250V * rDS(ON) = 2.000 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * High Input Impedance * 150oC Op...
Description From old datasheet system
2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs

File Size 52.51K  /  6 Page

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