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ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
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| Part No. |
STP80N06-1 STP80N06-10 4888
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| OCR Text |
...VALANCHE RUGGED TECHNOLOGY 100% avalance TESTED HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE HIGH dV/dt RUGGEDNESS APPLICATION ORIENTED CHARACTERIZATION TO-220
3 1 2
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s PWM MOTO... |
| Description |
From old datasheet system N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
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| File Size |
76.00K /
5 Page |
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意法半导 STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STP80NF55-06FP STP80NF55-06 6737
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| OCR Text |
...y for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC CONVERTERS ... |
| Description |
N - CHANNEL 55V - 0.005 - 80A TO-220/TO-220FP STripFET TM POWER MOSFET From old datasheet system N - CHANNEL 55V - 0.005ohm - 80A TO-220/TO-220FP STripFET POWER MOSFET
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| File Size |
47.78K /
6 Page |
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it Online |
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STH6NA80FI 2998 STW6NA80
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| OCR Text |
...3.4 A
TYPICAL RDS(on) = 1.8 avalance RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY APPLICATION ORIENTED CHARACTERIZATION
3 2 1
3 2 1
TO-247
ISOWATT218... |
| Description |
N-CHANNEL MOSFET N - CHANNEL 800V - 1.8 - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR From old datasheet system N - CHANNEL 800V - 1.8ohm - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR
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| File Size |
137.54K /
10 Page |
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it Online |
Download Datasheet
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