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For latent Found Datasheets File :: 697    Search Time::4.031ms    
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    MMBTH81LT1

MOTOROLA[Motorola, Inc]
Part No. MMBTH81LT1
OCR Text ...perature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can resul...
Description UHF/VHF Transistor

File Size 74.00K  /  4 Page

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    1PMT5920BT3 1PMT5921BT3 1PMT5922BT3 1PMT5923BT3 1PMT5924BT3 1PMT5925BT3 1PMT5926BT3 1PMT5927BT3 1PMT5928BT3 1PMT5929BT3

Motorola Mobility Holdings, Inc.
Motorola, Inc.
Motorola Inc
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. 1PMT5920BT3 1PMT5921BT3 1PMT5922BT3 1PMT5923BT3 1PMT5924BT3 1PMT5925BT3 1PMT5926BT3 1PMT5927BT3 1PMT5928BT3 1PMT5929BT3 1PMT5914BT3 ON0021 1PMT5948BT3 1PMT5913BT3 1PMT5915BT3 1PMT5916BT3 1PMT5917BT3 1PMT5918BT3 1PMT5919BT3 1PMT5930BT3 1PMT5931BT3 1PMT5932BT3 1PMT5933BT3 1PMT5934BT3 1PMT5935BT3 1PMT5936BT3 1PMT5937BT3 1PMT5938BT3 1PMT5939BT3 1PMT5940BT3 1PMT5941BT3 1PMT5942BT3 1PMT5943BT3 1PMT5944BT3 1PMT5945BT3 1PMT5946BT3 1PMT5947BT3 1PMT5913BT3THRU1PMT5948BT3
OCR Text ...perature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can resul...
Description    PLASTIC SURFACE MOUNT ZENER DIODES 2.5 WATTS 3.3.91 VOLTS
surface mount silicon Zener diodes 8.2 V, 0.38 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-216AA
surface mount silicon Zener diodes 6.2 V, 0.38 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-216AA
surface mount silicon Zener diodes 6.8 V, 0.38 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-216AA
IC 1:10 CLOCK BUFFER 28-SSOP 12 V, 0.38 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-216AA
surface mount silicon Zener diodes 10 V, 0.38 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-216AA
PLASTIC SURFACE MOUNT ZENER DIODES 2.5 WATTS 3.31 VOLTS
From old datasheet system

File Size 138.27K  /  6 Page

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    BAT54LT1

Motorola Inc
MOTOROLA[Motorola, Inc]
Part No. BAT54LT1
OCR Text ...perature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can resul...
Description 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES

File Size 75.95K  /  4 Page

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    DTA114GE ON0277 DTA114GE/D

ONSEMI[ON Semiconductor]
Part No. DTA114GE ON0277 DTA114GE/D
OCR Text ...perature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. maximum temperature gradient should be 5C or less. 260C for more than 10 seconds. * Soldering a d...
Description General Purpose Transistor
From old datasheet system

File Size 107.10K  /  6 Page

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    DTA114YE ON0278

Motorola Inc
MOTOROLA[Motorola, Inc]
Part No. DTA114YE ON0278
OCR Text ...perature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. maximum temperature gradient should be 5C or less. 260C for more than 10 seconds. * Soldering a d...
Description Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
From old datasheet system

File Size 139.35K  /  6 Page

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    BAS21LT1

MOTOROLA[Motorola, Inc]
Part No. BAS21LT1
OCR Text ...perature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can resul...
Description CASE 318 08, STYLE 8 SOT 23 (TO 236AB)

File Size 64.59K  /  4 Page

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    MMBT2484LT1

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Part No. MMBT2484LT1
OCR Text ...perature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can resul...
Description Low Noise Transistor

File Size 291.84K  /  6 Page

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    BSS123LT1D BSS123LT3 BSS123LT1-D BSS123LT1/D BSS123LT1

ON Semiconductor
Part No. BSS123LT1D BSS123LT3 BSS123LT1-D BSS123LT1/D BSS123LT1
OCR Text ...perature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can resul...
Description Power MOSFET 170 mAmps/ 100 Volts
Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23
Transient Voltage Suppressor Diodes

File Size 63.59K  /  8 Page

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    BSS123LT1 BSS123LT1_D ON0223

Motorola Inc
Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. BSS123LT1 BSS123LT1_D ON0223
OCR Text ...perature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can resul...
Description TMOS FET Transistor(N-Channel)
CASE 318-08, STYLE 21 SOT-23 (TO?36AB)
From old datasheet system

File Size 90.85K  /  4 Page

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    DAP222 DAP222_D ON0276

MOTOROLA INC
ON Semi
MOTOROLA[Motorola, Inc]
Part No. DAP222 DAP222_D ON0276
OCR Text ...perature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result...
Description SOT-416/SC-90 PACKAGE COMMON ANODE DUAL SWITCHING DIODE SURFACE MOUNT
SOT-16/SC-0 PACKAGE COMMON ANODE
From old datasheet system

File Size 88.38K  /  6 Page

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For latent Found Datasheets File :: 697    Search Time::4.031ms    
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