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For developmental Found Datasheets File :: 1156    Search Time::2.906ms    
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    RFD15N06LE RFD15N06LESM FN4079

INTERSIL[Intersil Corporation]
Part No. RFD15N06LE RFD15N06LESM FN4079
OCR Text ...m integrated circuits. Formerly developmental type TA49165. Features * 15A, 60V * rDS(ON) = 0.065 * 2kV ESD Protected * Temperature Compensating PSPICETM Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * 175oC Operating Tem...
Description From old datasheet system
15A 60V 0.065 Ohm ESD Rated Logic Level N-Channel Power MOSFETs
15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs
15A/ 60V/ 0.065 Ohm/ ESD Rated/ Logic Level/ N-Channel Power MOSFETs

File Size 94.66K  /  8 Page

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    RFG75N05E FN2275

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INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. RFG75N05E FN2275
OCR Text ...m integrated circuits. Formerly developmental type TA09821. Features * 75A, 50V * rDS(ON) = 0.008 * Electrostatic Discharge Rated * UIS Rating Curve (Single Pulse) * 175oC Operating Temperature * Temperature Compensated PSPICE(R) Model ...
Description From old datasheet system
75A/ 50V/ 0.008 Ohm/ N-Channel Power MOSFET
75A, 50V, 0.008 Ohm, N-Channel Power MOSFET 75 A, 50 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

File Size 53.41K  /  6 Page

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    RFP15N06L RFP15N05L FN1558 RFP15N05

INTERSIL[Intersil Corporation]
Part No. RFP15N06L RFP15N05L FN1558 RFP15N05
OCR Text ...m integrated circuits. Formerly developmental type TA0522. Features * 15A, 50V and 60V * rDS(ON) = 0.140 * Design Optimized for 5V Gate Drives * Can be Driven from QMOS, NMOS, TTL Circuits * Compatible with Automotive Drive Requirements...
Description 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs(15A, 50V and 60V, 0.140 惟,?昏??靛钩N娌?????MOS?烘?搴??)
15A/ 50V and 60V/ 0.140 Ohm/ Logic Level N-Channel Power MOSFETs
15A 50V and 60V 0.140 Ohm Logic Level N-Channel Power MOSFETs
From old datasheet system

File Size 40.20K  /  5 Page

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    HUF76137S3S HUF76137P3 HUF76137S3ST

FAIRCHILD[Fairchild Semiconductor]
Part No. HUF76137S3S HUF76137P3 HUF76137S3ST
OCR Text ...ery-operated products. Formerly developmental type TA76137. Features * Logic Level Gate Drive * 75A, 30V * Ultra Low On-Resistance, rDS(ON) = 0.009 * Temperature Compensating PSPICETM Model * Temperature Compensating SABERTM Model * The...
Description 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
75A 30V 0.009 Ohm N-Channel Logic Level UltraFET Power MOSFETs

File Size 220.88K  /  11 Page

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    IRFD1Z3 IRFD1Z0 IRFD1Z2 IRFD1Z1

INTERSIL[Intersil Corporation]
Part No. IRFD1Z3 IRFD1Z0 IRFD1Z2 IRFD1Z1
OCR Text ...m integrated circuits. Formerly developmental type TA17451. July 1998 Features * 0.4A and 0.5A, 60V and 100V * rDS(ON) = 2.4 and 3.2 * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics *...
Description 0.4A and 0.5A/ 60V and 100V/ 2.4 and 3.2 Ohm/ N-Channel Power MOSFETs
0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs
0.4A and 0.5A 60V and 100V 2.4 and 3.2 Ohm N-Channel Power MOSFETs

File Size 57.24K  /  6 Page

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    MUR860 MUR840 FN2091 RURP860 RURP840

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. MUR860 MUR840 FN2091 RURP860 RURP840
OCR Text ...switching transistors. Formerly developmental type TA09616. Features * Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <60ns * Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC * Reverse Voltage ...
Description 8A, 400V - 600V Ultrafast Diodes 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
From old datasheet system
8A/ 400V - 600V Ultrafast Diodes

File Size 48.29K  /  4 Page

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    RF1S22N10SM RFP22N10

FAIRCHILD[Fairchild Semiconductor]
Part No. RF1S22N10SM RFP22N10
OCR Text ...m integrated circuits. Formerly developmental type TA9845. Features * 22A, 100V * rDS(ON) = 0.080 * UIS SOA Rating Curve (Single Pulse) * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics *...
Description 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs

File Size 363.73K  /  6 Page

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    RFG50N06 RFP50N06 RF1S50N06SM RFP50N06NL

FAIRCHILD[Fairchild Semiconductor]
Part No. RFG50N06 RFP50N06 RF1S50N06SM RFP50N06NL
OCR Text ...m integrated circuits. Formerly developmental type TA49018. Features * 50A, 60V * rDS(ON) = 0.022 * Temperature Compensating PSPICE(R) Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * 175oC Operating Temperature Symbol ...
Description 50A 60V 0.022 Ohm N-Channel Power MOSFETs
50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs
50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs

File Size 371.14K  /  8 Page

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    HUF75344S3S HUF75344G3 HUF75344P3

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HUF75344S3S HUF75344G3 HUF75344P3
OCR Text ...ery-operated products. Formerly developmental type TA75344. Features * 75A, 55V * Simulation Models - Temperature Compensated PSPICE(R) and SABERTM Models - Thermal Impedance PSPICE and SABER Models Available on the web at: www.fairchil...
Description 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs

File Size 264.28K  /  10 Page

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    HUF75639G3 HUF75639P3 HUF75639S3 HUF75639S3S HUF75639P3NL HUF75639S3ST HUF75639S3STNL

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HUF75639G3 HUF75639P3 HUF75639S3 HUF75639S3S HUF75639P3NL HUF75639S3ST HUF75639S3STNL
OCR Text ...ery-operated products. Formerly developmental type TA75639. Features * 56A, 100V * Simulation Models - Temperature Compensated PSPICE(R) and SABERTM Electrical Models - Spice and Saber Thermal Impedance Models - www.fairchildsemi.com * ...
Description    56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs
30V N-Channel PowerTrench MOSFET 56 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
56A/ 100V/ 0.025 Ohm/ N-Channel UltraFET Power MOSFETs
56A 100V 0.025 Ohm N-Channel UltraFET Power MOSFETs

File Size 226.19K  /  10 Page

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For developmental Found Datasheets File :: 1156    Search Time::2.906ms    
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