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For developmental Found Datasheets File :: 1156    Search Time::2.016ms    
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    RFP50N05L RFG50N05L

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. RFP50N05L RFG50N05L
OCR Text ...rcuit supply voltages. Formerly developmental type TA09872. Features * 50A, 50V * rDS(ON) = 0.022 * UIS SOA Rating Curve (Single Pulse) * Design Optimized for 5V Gate Drive * Can be Driven Directly from CMOS, NMOS, TTL Circuits * Compat...
Description 50A/ 50V/ 0.022 Ohm/ Logic Level/ N-Channel Power MOSFETs
50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs 50 A, 50 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 372.51K  /  6 Page

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    RFP50N05 RFG50N05

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Part No. RFP50N05 RFG50N05
OCR Text ...r bipolar transistors. Formerly developmental type TA09772. Features * 50A, 50V * rDS(ON) = 0.022 * UIS Rating Curve (Single Pulse) * 175oC Operating Temperature Symbol D Ordering Information PART NUMBER RFG50N05 RFP50N05 PACKAG...
Description 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs
50A/ 50V/ 0.022 Ohm/ N-Channel Power MOSFETs

File Size 46.77K  /  6 Page

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    RFP50N06LE RFG50N06LE RF1S50N06LESM FN4072 F50N06LE FG50N06L FP50N06L

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Part No. RFP50N06LE RFG50N06LE RF1S50N06LESM FN4072 F50N06LE FG50N06L FP50N06L
OCR Text ...m integrated circuits. Formerly developmental type TA49164. Features * 50A, 60V * rDS(ON) = 0.022 * Temperature Compensating PSPICE(R) Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * 175oC Operating Temperature * Related ...
Description CAP Tantalum-Wet Miniature 6V 8.0 uF /-5% Silver can Axial High Reliability , TPC - Hilton
50A/ 60V/ 0.022 Ohm/ Logic Level N-Channel Power MOSFETs
From old datasheet system
50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs

File Size 410.06K  /  8 Page

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    RFP50N06 RF1S50N06SM RFG50N06 FN3575

INTERSIL[Intersil Corporation]
Part No. RFP50N06 RF1S50N06SM RFG50N06 FN3575
OCR Text ...m integrated circuits. Formerly developmental type TA49018. Features * 50A, 60V * rDS(ON) = 0.022 * Temperature Compensating PSPICE(R) Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * 175oC Operating Temperature Symbol ...
Description 50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs
50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs
50A 60V 0.022 Ohm N-Channel Power MOSFETs
From old datasheet system

File Size 73.62K  /  8 Page

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    HGT1S12N60A4S HGTG12N60A4 HGTP12N60A4 FN4656 HGT1S12N60A4S9A

INTERSIL[Intersil Corporation]
Intersil, Corp.
Fairchild Semiconductor, Corp.
Part No. HGT1S12N60A4S HGTG12N60A4 HGTP12N60A4 FN4656 HGT1S12N60A4S9A
OCR Text ...h mode power supplies. Formerly developmental Type TA49335. Features * >100kHz Operation at 390V, 12A * 200kHz Operation at 390V, 9A * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC...
Description    600V, SMPS Series N-Channel IGBT
From old datasheet system
600V/ SMPS Series N-Channel IGBT
600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N沟道绝缘栅双极型晶体 54 A, 600 V, N-CHANNEL IGBT, TO-247
600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N沟道绝缘栅双极型晶体 54 A, 600 V, N-CHANNEL IGBT, TO-263AB
600V, SMPS Series N-Channel IGBT 54 A, 600 V, N-CHANNEL IGBT, TO-220AB

File Size 114.49K  /  10 Page

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    HUF76139P3 HUF76139S3S HUF76139S3ST HUF76139S3STNL

FAIRCHILD[Fairchild Semiconductor]
Part No. HUF76139P3 HUF76139S3S HUF76139S3ST HUF76139S3STNL
OCR Text ...ery-operated products. Formerly developmental type TA76139. Features * Logic Level Gate Drive * 75A, 30V * Ultra Low On-Resistance, rDS(ON) = 0.0075 * Temperature Compensating PSPICE(R) Model * Temperature Compensating SABER(c) Model * ...
Description    75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
75A 30V 0.0075 Ohm N-Channel Logic Level UltraFET Power MOSFETs

File Size 224.57K  /  11 Page

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    IRFD210 FN2316

INTERSIL[Intersil Corporation]
Part No. IRFD210 FN2316
OCR Text ...m integrated circuits. Formerly developmental type TA17442. Features * 0.6A, 200V * rDS(ON) = 1.500 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics...
Description 600 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET
From old datasheet system

File Size 51.89K  /  6 Page

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    MUR8100E RURP8100 MURP810 RURP8100NL

FAIRCHILD[Fairchild Semiconductor]
Part No. MUR8100E RURP8100 MURP810 RURP8100NL
OCR Text ... switching transistor. Formerly developmental type TA09617. Features * Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . <75ns * Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175oC * Reverse Voltage . ....
Description 8A, 1000V Ultrafast Diodes
(MUR8100E / MURP810) 8A / 1000V Ultrafast Diodes

File Size 117.66K  /  5 Page

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    RF1S9530SM IRF9530 FN2221

INTERSIL[Intersil Corporation]
Part No. RF1S9530SM IRF9530 FN2221
OCR Text ...m integrated circuits. Formerly developmental type TA17511. Features * 12A, 100V * rDS(ON) = 0.300 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics ...
Description 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs
12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs
From old datasheet system

File Size 63.00K  /  7 Page

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    RFD15P05 RFD15P05SM RFP15P05 FN2387

INTERSIL[Intersil Corporation]
Part No. RFD15P05 RFD15P05SM RFP15P05 FN2387
OCR Text ...m integrated circuits. Formerly developmental type TA09833. Features * 15A, 50V * rDS(ON) = 0.150 * Temperature Compensating PSPICE(R) Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * Related Literature - TB334 "Guidelines...
Description 15A/ 50V/ 0.150 Ohm/ P-Channel Power MOSFETs
15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs
From old datasheet system

File Size 87.16K  /  8 Page

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For developmental Found Datasheets File :: 1156    Search Time::2.016ms    
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