jeiieu ^s.ml-(lon.a.uctoi l/^toauct, line. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . feature s ? glas s passivate d chi p ? superfas t switchin g tim e fo r high t efficienc y ? lo w revers e leakag e curren t ? hig h surg e capacit y mur605c t thr u mur660c t maximu m rating s 6 am p supe r fas t glas s passivate d rectifie r 5 0 t o 60 0 volt s operatin g temperature : -55 c t o +150 c storag e temperature : -55 c t o +150 c microsem i catalo g numbe r viur605c t MUR610c t mur620c t mur640c t viur660c t devic e markin g mur605c t MUR610c t mur620c t mur640c t mur660c t maximu m recurren t pea k revers e voltag e 50 v 100 v 200 v 400 v 600 v maximu m rm s voltag e 35 v 70 v 140 v 280 v 420 v maximu m d c blockin g voltag e 50 v 100 v 200 v 400 v 600 v electrica l characteristic s @ 2 5 c unles s otherwis e specifie d averag e forwar d curren t pea k forwar d surg e curren t maximu m forwar d voltag e dro p pe r elemen t 60&t-620c t 640ct - 660c t maximu m d c revers e curren t a t rate d d c blockin g voltag e maximu m revers e recover y tim e 605ct - 62 0 640c t 660c t ip(av ) ifs m v f i r t r r 6 a 75 a .975 v 1.25 v 5.0u a 50u a 35n s 60n s 75n s t c = 130 c 8.3ms , hal f sin e if m = 3 a pe r element ; t a = 25c * t j = 25 c t j = 100 c i f =8.0a , l rr =0.25 a h f -\ i j ' h g ~ t ? b t- f 1 2 \3 1 * n o-220a b ~~* i * i c ) 4 ???? ? 3 u t t t pi n 1 anod e pi n 2 . cathod e pi n 3 . anod e pi n 4 . cathod e t i - v j j u- d . - ? ? ^ s dimension s inche s di m mi n a ,57 0 b .38 0 c .16 0 d .02 5 f .14 2 g .09 5 h .11 0 j 01 8 k 50 0 l 04 5 q 10 0 r 08 0 s .04 5 t ??:* * u v .04 5 ma x .62 0 .40 5 .19 0 .03 5 .14 7 .10 5 .15 5 .02 5 ,56 2 .06 0 .12 0 .11 0 .05 5 7r ^ .05 0 m m mi n 144 8 96 6 40 6 0.6 4 3.6 1 2.4 2 2.8 0 0.4 6 12.7 0 1.1 4 2.5 4 2,0 4 1.1 4 s q 7 1.1 5 ma x 15,7 5 10.2 8 4.8 2 0.8 9 3.7 3 2.6 6 39 3 06 4 142 7 1 5 2 30 4 27 9 1,39 r 4f t 1.2 7 not e n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . however , n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
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