2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212 ) 227-600 5 fax : (973 ) 376-896 0 2n167 a np n germaniu m transisto r absolut e .maximu m ratings : (25c ) voltage ! collecto r t o bas e v n collecto r t o emitte r v m emitte r t o bas e v m curren t collecto r i c emitte r i n dtutpalie n collecto r (25'c) * p c tota l transisto r (25"c)* * p u temperatur e storag e tbt o ?derat e 1. 1 mw/' c increas e i m ambien t temperature , **derat e 1.2 5 mw/* c increase i n ambien t temperature . 3 0 vol u 3 0 volt s 6 volt s 7 5 m a 7 5 m a 6 6 m w 7 5 m w 86' c electrica l characteristics : (25c unles s otherwis e spot-mod ) v ? f- do?ig n d- c characteristic s forwar d curran t tranfh r rati a (i c = 8 ma ; vc r = iv ) ut o inpu t voltag e (i n = .4 7 ma ; i c = 8 ma ) collecto r t o fmitte r voltag e (bas e open ; ir . = . 3 ma ) saturatio n voltag e (i . = . 8 m? ; i c = 8 ma ) cutof f characteristic s collecto r curran t (i * = 0 ; v , ? ? = 16v ; t * = 25- 0 collecto r curran t (i ? = 0 ; vc . = 15v ; t * = 71'c ) imttte r curran t (i c = 0 ; v k ? ' = 5v ; t a = 25"c ) tmilto r curran t (i r = 0 ; vk h = 5v ; t a = 71"c ) hio h frequenc y characteristic s (commo n base ) (v c . = sv j i . = 1 ma ) alph a cutof f frequenc y collecto r capacit y ( f = 1 me ) voltag e feedbac k rati o ( f = 1 me ) lo w frequenc y characteristic s (commo n base) (vc . = 6v ; i . = - 1 ma ; f = 27 0 cps ) forwar d curran t tranife r rati o outpu t admittanc e inpu t impedanc e reveri e voltag e transfe r rati a switchin g characteristics , (se c circuit ) (l a = 8 ma ; i n = . 8 ma ; i m = . 8 ma ) turn-o n tim e storag e tim e fal l tim e hr * v ? vc . vc?'?* ? ir o i,-, , ik o ik o f? k c,, k h, b h, . h. k h, k h, t t . t . t , min . (cente r 1 7 3 0 .3 * .4 1 3 0 .3 5 . 0 1 1 . 4 8 5. 0 9. 0 2. 5 7. 3 .95 2 .98 5 a * . 2 26 * 5 5 1. 5 . 4 . 7 . 2 max . 9 0 .6 * 1. 5 2 9 1. 5 6 .995 * .7 ' 82 * * volt s volt s volt s p a ? a ^ a /* a m e ulii x!0- ? mrtlho s ohm s xlo- 4 mse c mse c mse c ?thes e limit s ar e desig n limit s withi n whic h 98 % o f productio n normall y fall . n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , parameter s limit s an d packag e dimension s withou t notic e informatio n ftimishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . howeve r n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n i semi-ccnductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e plncin g orders . downloaded from: http:///
|
