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| p - channel enhancement mode mosfet feature - 20v/ - 4.0a, r ds(on) = 60m(max) @v gs = - 4.5v. r ds(on) =70m(max) @v gs = - 2.5v. super high dense cell design for extremely low r ds(on) reliable and rugged esd protected sc - 59 for surface mount package applications power management portable equipment and battery powered systems. 1 of 3
typical characteristics 2 of 3 3 of 3 |
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