page:p2 - p 1 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. fe a tures ? low current (max. 50ma) ? high voltage (max. 300v). ? video output stages. m arking : dc maximum ratings ( t a =25 unless otherwise noted) par a met e r symbol v a lue uni t collector - base v ol t age v cbo 3 00 v collector - emitter v ol t age v ceo 3 00 v emitter - base v ol t age v ebo 5 v collector cur r ent - continuous i c 5 0 m a collector power dissi p ation p c 5 00 m w juncti o n t e mperature t j 150 s torage t emp e r a ture t stg - 55to +150 electrical characteristics ( @ ta=25 unless otherw ise specified ) parame t e r symbol t est conditions m in t yp m ax u nit collector - base breakd o w n v o l t age v cbo i c = 100 a, i e =0 300 v collector - emitter bre a kd o w n v ol t age v ceo i c = 1 ma, i b =0 300 v emitter - b a s e breakd o w n v o l t age v ebo i e = 100 a, i c =0 5 v collector cut - off current i cbo v cb =200 v , i e =0 10 na emitter cut - off current i ebo v eb = 5 v , i c =0 50 na dc cur r ent g a in h fe v ce =20 v , i c =25ma 50 collector - emitter satu r ation v o l t age v ce(sat) i c =30ma, i b = 5 ma 0.6 v t r a n s ition fr e qu e n c y f t v ce =10 v , i c =10ma, f = 100m h z 60 mhz BF620 ( n pn ) 1. base 2. collecto sot - 89 3. emitter
page:p2 - p 2 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. BF620 typical characteristics
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