j.iu , o ne.. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . silico n transistor s 2n3858a,9 a absolut e maximu m ratings : (25c ) voltage i collecto r t o emitte r emitte r t o base - collecto r t o bas e curran t collecto r (stead y state) * diitipolio n tota l powe r (fre e ai r a t 26c ) * * v,.,,, , p t telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 s otherwis e specified ) g o volt s 0 volt s 0 0 volt s 10 0 ni a 3(5 0 m w temperatur e storag- e tht. , operatin g t , lea d soldering , "/in " via " fro m ti . cas e fo r 1 0 second s max . 'determine d fro m powe r limitation s du e t o saturatio n voltag e a t thi s current . * "derat e 3. 6 mw/' c increas e i n ambien t temperatur e alx>v e 25c . -5 5 t o 15 0 " c 12 5 " c 26 0 " c seatin g plan t 1 e 2 c 3 b to-9 2 np n silico n electrica l characteristics : (2 5c ) (unles s otherwis e specified ) stati c characteristic s collecto r cutof f curren t (vei l cov ) (t * = 100c ) emitte r cutof f curren t (vm i = gv ) forwar d curren t trantfe r rati o 2n3858 a (v rk = iv , i c = 1 0 ma ) 2n3859 a (v ? - iv . i c - 1 0 ma ) 2n3858 a (v rl : = 4.5v , i, - = 2ma ) 2n3859 a (v?-, : = 4.5v , i, - - 2ma ) collectorbas e breakdow n voltag e (i c = 0. 1 ma ) emitterbat e breakdow n voltag e (i b = 0. 1 ma ) collectoremitte r breakdow n voltag e (i n 1 ma ) collecto r saturatio n voltag e (i c ^ 1 0 ma , i n = 1 ma ) baieemitte r voltag e (i c = 1 0 ma , vc e 1 volt ) bateemitte r voltag e (i c = 1 0 ma , i b = 1 ma ) dynami c characteristic s gai n bandwidt h produc t ( v,- k = 10v , i n 2 ma ) 2n3858 a 2n3859 a collectorbat e tim e conitan t (v ( . k 10v , i c = 2 ma ) outpu t capacitance , commo n bo, , (vr n = 10v , i e = 0 , f = 1 mhz ) inpu t capqcltanfe , commo n bat e (vri n = ",8v , i k = 0 , f = j cot e capacitanc e sym . irn, , i? , ikim , hrr. hk b ht- k hr n bvcm , bv kn( ) bvc k( , f x f r r,,'c r crl, n c ' t (i n min . r. o 10 0 g o 10 0 g o g g o 9 0 n o 2. 0 typ . .6 8 .7 0 12 5 14 0 6 5 2. 7 1 0 o.lll l max . 5 0 1 0 0. 1 12 0 20 0 0.12 5 .7 8 25 0 25 0 15 0 4. 0 unit i n a volt s volt s volt s volt s volt s volt s mh z mh z psec . pi' ' p k n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d to.b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . however . n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
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