, u na. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . silico n pn p powe r transisto r telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 2sa76 5 descriptio n ? collector-emitte r breakdow n voltage - : v (br) ceo = -sov(min ) ? lo w collecto r saturatio n voltage - :v ce (sa t )=1.5v(max.)@lc=4 a ? complemen t t o typ e 2sc144 5 application s ? designe d fo r genera l purpos e powe r amplifie r application s absolut e maximu m ratings(t a =25'c ) symbo l vcb o vce o veb o i c p c t j t st g paramete r collector-bas e voltag e collector-emitte r voltag e emitter-bas e voltag e collecto r current-continuou s tota l powe r dissipatio n @ t c =25 c junctio n temperatur e storag e temperatur e rang e valu e -8 0 -8 0 - 6 - 6 4 0 15 0 -55-15 0 uni t v vv a w c " c pi n bas e 2 . bette r 3 , collector (case ) to-6 6 packag e 1 ' m m a b f d e g h k l h ij i j v hu m wi n 31,4 0 17.3 0 6.7 0 0.7 0 1.4 0 ma x 31.8 0 17.7 0 7.1 0 0.9 0 1.6 0 5.0 8 2.5 4 9.8 0 14.7 0 12.4 0 3.6 0 24.3 0 j.s o 10.2 0 14.9 0 12.6 0 3.8 0 24.s o 3.7 0 n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s \vithou t notice . informatio n fumishe d b y n. i semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f aoin g t o press . i kmever , n. i semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . " n. i seiiii-condiietor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placin a orders . qualit y semi-conductor s downloaded from: http:///
silico n pn p powe r transisto r 2sa76 5 electrica l characteristic s tc=25' c unles s otherwis e specifie d symbo l v(br)ce o v(br)cb o vce(sat ) vbe(sat ) icb o ieb o h f e f t paramete r collector-emitte r breakdow n voltag e collector-bas e breakdow n voltag e collector-emitte r saturatio n voltag e base-emitte r saturation voltag e collecto r cutof f curren t emitte r cutof f current d c current gai n current-gai n bandwidt h produc t condition s l c =-10ma ; i b = 0 l c =-1ma ; i e = 0 l c = -4a ; l e = -0.4 a | c = -4a ; i b = -0.4 a v cb = -80v ; i e = 0 veb = -6v ; l c = 0 lc = -1a ; v ce = -4 v lc=-0.5a ; v ce =-12 v mi n -8 0 -8 0 5 0 typ . 1 0 ma x -1. 5 -2. 0 -1 0 -1 0 uni t v v v v u a u a mh z downloaded from: http:///
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