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| 1 . 9 0 . 9 5 0 . 9 5 1 . 0 2. 4 1. 3 2 . 9 0 . 4 switching diode features power dissipation p d : 150 mw(tamb=25 ) forward current i f : 100 m a reverse voltage v r : 80 v operating and storage junction temperature range t j ,t stg : -55 to +150 electrical characteristics(tamb=25 unless otherwise specified) parameter symbol test conditions min max unit reverse breakdown voltage v (br) i r = 100 a 80 v reverse voltage leakage current i r v r =80v 0.5 a forward voltage v f i f =100ma 1.2 v diode capacitance c d v r =0v f=1mhz 4 pf reverse recovery time t r r 4 ns unit: mm sot-23 marking a3 ki semiconductor co. sot-23 plastic-encapsulate diodes 1SS181
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