BCP5551 npn epitaxial planar transistor elektronische bauelemente 1.base 2.collector 3.emitter absolute maximum ratings (t amb = 2 5 c, unless otherwise specified) o p s y m b o l v a l u e u n i t a r a m e t e r c o l l e c t o r - b a s e v o l t a g e v c b o 1 8 0 v v v m a w c o c o l l e c t o r - e m i t t e r v o l t a g e v c e o v e b o 6 e m i t t e r - b a s e v o l t a g e 6 0 0 p d i c 1 . 2 c o l l e c t o r c u r r e n t t o t a l p o w e r d i s s i p a t i o n o p e r a t i n g j u n c t i o n a n d s t o r a g e t e m p e r a t u r e t j , t s t g - 5 5 ~ + 1 5 0 1 6 0 p s y m b o l m i n . t y p . m a x . u n i t t e s t c o n d i t i o n s a r a m e t e r c o l l e c t o r - b a s e b r e a k d o w n v o l t a g e i c = 1 0 0 a i c = 1 m a i e = 1 0 a v c b = 1 2 0 v v e b = 4 v i c = 1 0 m a , i b = 1 m a i c v c b = 1 0 v , f = 1 m h z b v c b o 1 8 0 v c o l l e c t o r - e m i t t e r b r e a k d o w n v o l t a g e b v c e o b v e b o v v 6 n a e m i t t e r - b a s e b r e a k d o w n v o l t a g e n a i c b o i e b o v 1 c e ( s a t ) - - - - - - - - - - - - - - - - - 2 0 0 1 5 0 5 0 5 0 m v m v c o l l e c t o r c u t - o f f c u r r e n t e m i t t e r c u t - o f f c u r r e n t o u t p u t c a p a c i t a n c e 1 6 0 i c = 5 0 m a , i b = 5 m a v c e = 5 v , i c = 1 m a v c e = 5 v , i c = 1 0 m a v c e = 5 v , i c = 5 0 m a v c e = 1 0 v , i c = 1 0 m a , f = 1 0 0 m h z 8 0 8 0 v b e ( s a t ) 2 h f e 1 h f e 2 h f e 3 f t - - - - - 3 0 0 - - 3 0 2 5 0 1 m h z v b a s e - e m i t t e r v o l t a g e d c c u r r e n t g a i n t r a n s i t i o n f r e q u e n c y v 2 c e ( s a t ) c o l l e c t o r - e m i t t e r s a t u r a t i o n v o l t a g e = 5 0 m a , i b = 5 m a c o b v b e ( s a t ) 1 - 6 p f - 1 0 0 1 v i c = 1 0 m a , i b = 1 m a m a r k i n g : x x x x r o h s c o m p l i a n t p r o d u c t 5 5 5 1 ( x x x x = d a t e c o d e ) electrical characteristics (t amb = 2 5 c ) o designed for gereral prupose application requiring high breakdown voltage. 1 2 3 features sot-89 r e f . m i n . m a x . r e f . m i n . m a x . a 4 . 4 4 . 6 g 3 . 0 0 r e f . b 4 . 0 5 4 . 2 5 h 1 . 5 0 r e f . c 1 . 5 0 1 . 7 0 i 0 . 4 0 0 . 5 2 d 1 . 3 0 1 . 5 0 j 1 . 4 0 1 . 6 0 e 2 . 4 0 2 . 6 0 k 0 . 3 5 0 . 4 1 f 0 . 8 9 1 . 2 0 l 5 q t y p . m 0 . 7 0 r e f . any changing of specification will not be informed individual http://www.secosgmbh.com 01-jun-2002 rev. a page 1 of 2
c h a r a c t e r i s t i c s c u r v e bcp5 551 np n epitaxial planar transistor elektronische bauelemente any changing of specification will not be informed individual http://www.secosgmbh.com 01-jun-2002 rev. a page 2 of 2
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