smd type transistors 1.80 +0.1 -0.1 4.50 +0.1 -0.1 2.50 +0.1 -0.1 0.80 +0.1 -0.1 4.00 +0.1 -0.1 0.53 +0.1 -0.1 0.48 +0.1 -0.1 1.50 +0.1 -0.1 0.44 +0.1 -0.1 2.60 +0.1 -0.1 0.40 +0.1 -0.1 3.00 +0.1 -0.1 sot-89 unit: mm 1. base 2. collector 3. emiitter kxt5401 (cxt5401) features high current (max. 500ma). low voltage (max. 150 v). electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector to base breakdown voltage v cbo i c =-100 a -160 v collector to emitter breakdown voltage v ceo i c =-1.0ma -150 v emitter to base breakdown voltage v ebo i e =-10 a -5.0 v v cb =- 120 v, i e =0 -50 na v cb =- 120 v, t a =100 -50 a i c =-1.0ma;v ce = -5.0 v 50 i c = -10ma; v ce =- 5.0v 60 240 i c =-50ma;v ce = -5.0v 50 i c =- 10 ma; i b = -1.0ma -0.2 v i c =-50ma;i b = -5.0ma -0.5 v i c =-10ma;i b = -1.0ma -1.0 v i c =-50ma;i b =- 5.0ma -1.0 v output capacitance c ob v cb =-10 v, i e = 0,f=1.0mhz 6.0 pf transition frequency f t i c =-10ma;v ce =-10v; f = 100 mhz 100 300 mhz i cbo collector cutoff current v ce(sat) collector to emitter saturation voltage base to emitter saturation voltage v be(sat) h fe dc current gain absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -160 v collector-emitter voltage v ceo -150 v emitter-base voltage v ebo -5 v collector current (dc) i c -500 ma power dissipation p d 1.2 w thermal resistance junction- to-ambient r ja 104 /w junction temperature t j 150 storage temperature t stg -65to+150 sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification 4008-318-123
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