? semiconductor components industries, llc, 1999 december, 1999 rev. 2 1 publication order number: 1n6267a/d
unidirectional and bidirectional general data is applicable to all series in this group mosorb devices are designed to protect voltage sensitive components from high voltage, high energy transients. they have excellent clamping capability, high surge capability, low zener impedance and fast response time. these devices are on semiconductor's exclusive, cost-effective, highly reliable surmetic axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect cmos, mos and bipolar integrated circuits. specification features: ? standard voltage range e 6.2 to 250 v ? peak power e 1500 watts @ 1 ms ? maximum clamp voltage @ peak pulse current ? low leakage < 5 m a above 10 v ? ul recognition ? response time is typically < 1 ns mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable polarity: cathode indicated by polarity band. when operated in zener mode, will be positive with respect to anode mounting position: any wafer fab location: phoenix, arizona assembly/test location: guadalajara, mexico maximum ratings rating symbol value unit peak power dissipation (1) @ t l 25 c p pk 1500 watts steady state power dissipation @ t l 75 c, lead length = 3/8 derated above t l = 75 c p d 5 50 watts mw/ c forward surge current (2) @ t a = 25 c i fsm 200 amps operating and storage temperature range t j , t stg 65 to +175 c lead temperature not less than 1/16 from the case for 10 seconds: 230 c notes: 1. nonrepetitive current pulse per figure 5 and derated above t a = 25 c per figure 2. notes: 2. 1/2 sine wave (or equivalent square wave), pw = 8.3 ms, duty cycle = 4 pulses per minute maximum. mosorb zener tvs 6.2250 volts 1500 watt peak power 5 watts steady state devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value. device package shipping ordering information 1.5kexxxa case 41a 500 units/box 1.5kexxxarl4 case 41a plastic case 41a http://onsemi.com tape and reel 1500 units/reel 1.5kexxxca bidirectional case 41a 500 units/box 1.5kexxxcarl4 bidirectional case 41a tape and reel 1500 units/reel 1n6xxxa case 41a 500 units/box 1n6xxxarl case 41a tape and reel 1500 units/reel
1n6267a series http://onsemi.com 2 *electrical characteristics (t a = 25 c unless otherwise noted) v f # = 3.5 v max, i f ** = 100 a breakdown voltage working peak maximum maximum reverse maximum reverse voltage @ i rsm maximum jedec v br volts @i t reverse voltage v rwm *** reverse leakage @v rwm surge current i rsm rsm (clamping voltage) v rsm temperature coefficient of v br jedec device device min nom max @ i t (ma) v rwm (volts) @ v rwm i r ( m a) i rsm (amps) v rsm (volts) of v br (%/ c) 1n6267a 1.5ke6.8a 6.45 6.8 7.14 10 5.8 1000 143 10.5 0.057 1n6268a 1.5ke7.5a 7.13 7.5 7.88 10 6.4 500 132 11.3 0.061 1n6269a 1.5ke8.2a 7.79 8.2 8.61 10 7.02 200 124 12.1 0.065 1n6270a 1.5ke9.1a 8.65 9.1 9.55 1 7.78 50 112 13.4 0.068 1n6271a 1.5ke10a 9.5 10 10.5 1 8.55 10 103 14.5 0.073 1n6272a 1.5ke11a 10.5 11 11.6 1 9.4 5 96 15.6 0.075 1n6273a 1.5ke12a 11.4 12 12.6 1 10.2 5 90 16.7 0.078 1n6274a 1.5ke13a 12.4 13 13.7 1 11.1 5 82 18.2 0.081 1n6275a 1.5ke15a 14.3 15 15.8 1 12.8 5 71 21.2 0.084 1n6276a 1.5ke16a 15.2 16 16.8 1 13.6 5 67 22.5 0.086 1n6277a 1.5ke18a 17.1 18 18.9 1 15.3 5 59.5 25.2 0.088 1n6278a 1.5ke20a 19 20 21 1 17.1 5 54 27.7 0.09 1n6279a 1.5ke22a 20.9 22 23.1 1 18.8 5 49 30.6 0.092 1n6280a 1.5ke24a 22.8 24 25.2 1 20.5 5 45 33.2 0.094 1n6281a 1.5ke27a 25.7 27 28.4 1 23.1 5 40 37.5 0.096 1n6282a 1.5ke30a 28.5 30 31.5 1 25.6 5 36 41.4 0.097 1n6283a 1.5ke33a 31.4 33 34.7 1 28.2 5 33 45.7 0.098 1n6284a 1.5ke36a 34.2 36 37.8 1 30.8 5 30 49.9 0.099 1n6285a 1.5ke39a 37.1 39 41 1 33.3 5 28 53.9 0.1 1n6286a 1.5ke43a 40.9 43 45.2 1 36.8 5 25.3 59.3 0.101 1n6287a 1.5ke47a 44.7 47 49.4 1 40.2 5 23.2 64.8 0.101 1n6288a 1.5ke51a 48.5 51 53.6 1 43.6 5 21.4 70.1 0.102 1n6289 1.5ke56a 53.2 56 58.8 1 47.8 5 19.5 77 0.103 1n6290a 1.5ke62a 58.9 62 65.1 1 53 5 17.7 85 0.104 1n6291a 1.5ke68a 64.6 68 71.4 1 58.1 5 16.3 92 0.104 1n6292a 1.5ke75a 71.3 75 78.8 1 64.1 5 14.6 103 0.105 1n6293a 1.5ke82a 77.9 82 86.1 1 70.1 5 13.3 113 0.105 1n6294a 1.5ke91a 86.5 91 95.5 1 77.8 5 12 125 0.106 1n6295a 1.5ke100a 95 100 105 1 85.5 5 11 137 0.106 1n6296a 1.5ke110a 105 110 116 1 94 5 9.9 152 0.107 1n6297a 1.5ke120a 114 120 126 1 102 5 9.1 165 0.107 1n6298a 1.5ke130a 124 130 137 1 111 5 8.4 179 0.107 1n6299a 1.5ke150a 143 150 158 1 128 5 7.2 207 0.108 1n6300a 1.5ke160a 152 160 168 1 136 5 6.8 219 0.108 1n6301a 1.5ke170a 162 170 179 1 145 5 6.4 234 0.108 1n6302a 1.5ke180a 171 180 189 1 154 5 6.1 246 0.108 1n6303a 1.5ke200a 190 200 210 1 171 5 5.5 274 0.108 1.5ke220a 209 220 231 1 185 5 4.6 328 0.109 1.5ke250a 237 250 263 1 214 5 5 344 0.109 ** * indicates jedec registered data. * ** 1/2 sine wave (or equivalent square wave), pw = 8.3 ms, duty cycle = 4 pulses per minute maximum. *** a transient suppressor is normally selected according to the maximum reverse stand-off voltage (v rwm ), which should be equal to or greater than the dc or continuous peak operating *** voltage level. surge current waveform per figure 5 and derate per figure 2 of the general data e 1500 w at the beginning of this group. v br measured at pulse test current i t at an ambient temperature of 25 c. # v f applies to non-ca suffix devices only. for bidirectional applications preferred bidirectional devices e e use ca suffix on 1.5ke series for 1.5ke6.8ca 1.5ke10ca 1.5ke12ca through 1.5ke250ca. 1.5ke18ca 1.5ke36ca electrical characteristics apply in both directions.
1n6267a series http://onsemi.com 3 figure 1. pulse rating curve 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 peak pulse derating in % of peak power or current @ t a = 25 c t a , ambient temperature ( c) figure 2. pulse derating curve figure 3. capacitance versus breakdown voltage 1n6373, icte-5, mpte-5, through 1n6389, icte-45, c, mpte-45, c 1n6267a/1.5ke6.8a through 1n6303a/1.5ke200a 5 4 3 2 1 25 50 75 100 125 150 175 200 p d , steady state power dissipation (watts) t l , lead temperature ( c) 3/8 3/8 figure 4. steady state power derating 0 0 100 50 0 01 2 3 4 t, time (ms) value (%) t r t p peak value e i rsm half value i rsm 2 figure 5. pulse waveform pulse width (tp) is defined as that point where the peak current decays to 50% of irsm. tr 3 10 m s 1 m s10 m s 100 m s 1 ms 10 ms 100 10 1 t p , pulse width p p , peak power (kw) nonrepetitive pulse waveform shown in figure 5 bv, breakdown voltage (volts) bv, breakdown voltage (volts) 1 10 100 1000 10,000 1000 100 10 1 10 100 1000 10,000 1000 100 10 c, capacitance (pf) c, capacitance (pf) measured @ zero bias measured @ stand-off voltage (v r ) measured @ stand-off voltage (v r ) measured @ zero bias 0.1 m s
1n6267a series http://onsemi.com 4 1n6373, icte-5, mpte-5, through 1n6389, icte-45, c, mpte-45, c 1n6267a/1.5ke6.8a through 1n6303a/1.5ke200a figure 6. dynamic impedance 1000 500 200 100 50 20 10 5 2 1 1000 500 200 100 50 20 10 5 2 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 d v z , instantaneous increase in v z above v z (nom) (volts) 0.3 0.5 0.7 1 2 3 5 7 10 20 30 d v z , instantaneous increase in v z above v z (nom) (volts) i z , zener current (amps) v z (nom) = 6.8 to 13 v t l =25 c t p =10 m s v z (nom) = 6.8 to 13 v 20 v 24 v 43 v 75 v 180 v 120 v i z , zener current (amps) 20 v 24 v 43 v figure 7. typical derating factor for duty cycle derating factor 1 ms 10 m s 1 0.7 0.5 0.3 0.05 0.1 0.2 0.01 0.02 0.03 0.07 100 m s 0.1 0.2 0.5 2 5 10 50 1 20 100 d, duty cycle (%) pulse width 10 ms t l =25 c t p =10 m s application notes response time in most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. in this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. the capacitance effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in figure a. the inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. this inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in figure b. minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. these devices have excellent response time, typically in the picosecond range and negligible inductance. however, external inductive effects could produce unacceptable overshoot. proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. some input impedance represented by z in is essential to prevent overstress of the protection device. this impedance should be as high as possible, without restricting the circuit operation. duty cycle derating the data of figure 1 applies for non-repetitive conditions and at a lead temperature of 25 c. if the duty cycle increases, the peak power must be reduced as indicated by the curves of figure 7. average power must be derated as the lead or
1n6267a series http://onsemi.com 5 ambient temperature rises above 25 c. the average power derating curve normally given on data sheets may be normalized and used for this purpose. at first glance the derating curves of figure 7 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 m s pulse. however, when the derating factor for a given pulse of figure 7 is multiplied by the peak power value of figure 1 for the same pulse, the results follow the expected trend. typical protection circuit v in v l v v in v in (transient) v l t d v v l v in (transient) z in load overshoot due to inductive effects t d = time delay due to capacitive effect t t figure 8. figure 9. ul recognition* the entire series has underwriters laboratory recognition for the classification of protectors (qvgv2) under the ul standard for safety 497b and file #116110. many competitors only have one or two devices recognized or have recognition in a non-protective category. some competitors have no recognition at all. with the ul497b recognition, our parts successfully passed several tests including strike voltage breakdown test, endurance conditioning, temperature test, dielectric voltage-withstand test, discharge test and several more. whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their protector category. *applies to 1.5ke6.8a, ca thru 1.5ke250a, ca clipper bidirectional devices 1. clipper-bidirectional devices are available in the 1.5kexxa series and are designated with a acao suffix; for example, 1.5ke18ca. contact your nearest motorola representative. 2. clipper-bidirectional part numbers are tested in both directions to electrical parameters in preceeding table (except for v f which does not apply). 3. the 1n6267a through 1n6303a series are jedec registered devices and the registration does not include a acao suffix. to order clipper-bidirectional devices one must add ca to the 1.5ke device title.
1n6267a series http://onsemi.com 6 outline dimensions 1500 watt peak power transient voltage suppressors e axial leaded case 41a-02 plastic (refer to section 10 of the tvs/zener data book (dl150/d) for surface mount, thermal data and footprint information.) k p a d b p min min max max inches millimeters dim 9.14 4.83 0.97 25.40 e 9.52 5.21 1.07 e 1.27 0.360 0.190 0.038 1.000 e 0.375 0.205 0.042 e 0.050 a b d k p notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. lead finish and diameter uncontrolled in dim p. k
1n6267a series http://onsemi.com 7 notes
1n6267a series http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent r ights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into t he body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong 80044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1418549 phone : 81354878345 email : r14153@onsemi.com fax response line : 3036752167 8003443810 toll free usa/canada on semiconductor website: http://onsemi.com for additional information, please contact your local sales representative. 1n6267a/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone: (+1) 3033087140 (mf 2:30pm to 5:00pm munich time) email: onlitgerman@hibbertco.com french phone: (+1) 3033087141 (mf 2:30pm to 5:00pm toulouse time) email: onlitfrench@hibbertco.com english phone: (+1) 3033087142 (mf 1:30pm to 5:00pm uk time) email: onlit@hibbertco.com
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