elektronische bauelemente C1815 200 mw , 150 ma, 60 v npn plastic encapsulated transistor 31-dec-2009 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 1 base 2 emitter collector 3 top view a l c b d g h j f k e 1 2 3 1 2 3 rohs compliant product a suffix of -c specifies halogen & lead-free feature power dissipation marking: hf absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 60 v collector to emitter voltage v ceo 50 v emitter to base voltage v ebo 5 v collector current - continuous i c 150 ma collector power dissipation pc 200 mw junction, storage temperature t j , t stg 150, -55 ~ 150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min typ max unit test condition collector to base breakdown voltage v (br)cbo 60 - - v i c =100 a, i e = 0a collector to emitter breakdown voltage v (br)ceo 50 - - v i c =0.1ma, i b = 0a collector cut-off current i cbo - - 0.1 a v cb =60 v, i e = 0 a collector cut-off current i ceo 0.1 a v ce =50 v, i b = 0 a emitter cut-off current i ebo - - 0.1 a v eb =5 v, i c = 0 a dc current gain h fe 130 - 400 v ce =6v, i c =2ma collector to emitter saturation voltage v ce(sat) - - 0.25 v i c =100ma, i b =10ma base to emitter saturation voltage v be(sat) - - 1 v i c =100ma, i b =10ma transition frequency f t 80 - - mhz v ce = 10v, i c = 1 ma, f = 30 mhz classification of h fe rank l h range 130-200 200-400 sot-23 millimeter millimeter ref. min. max. ref. min. max. a 2.70 3.04 g - 0.18 b 2.10 2.80 h 0.40 0.60 c 1.20 1.60 j 0.08 0.20 d 0.89 1.40 k 0.6 ref. e 1.78 2.04 l 0.85 1.15 f 0.30 0.50
elektronische bauelemente C1815 200 mw , 150 ma, 60 v npn plastic encapsulated transistor 31-dec-2009 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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