v ds = 30v r d s ( o n) , v gs @ 10 v , i ds @ 12 a = 10 . 5m r d s ( o n) , v gs @ 4 . 5 v , i ds @ 12 a = 15m f ea t u r es a d v an c ed t r en c h p r o c e ss t e c hno l o gy hi g h d en s i t y c e ll d e s i g n f o r ul t r a lo w o n - r e s i s t an ce f u ll y c ha r a c t e r i z ed a v a l an c he v o l t a g e and c u rr en t i m p r o v ed s hoo t - t h r ou g h f om p a ck a g e di m en s i ons m illi m e t er m illi m e t er r e f. m in . m a x . r e f . m in . m a x . a 5 . 80 6 . 20 m 0 . 10 0 . 25 b 4 . 80 5 . 00 h 0 . 35 0 . 49 c 3 . 80 4 . 00 l 1 . 35 1 . 75 d 0 k 8 k j 0 . 375 r e f . e 0 . 40 0 . 90 k 45 k f 0 . 19 0 . 25 g 1 . 27 t y p . m a x i m u m r a t i n g s and t he r m a l c ha r a c t e r i s t i cs ( t a = 25o c un l e ss o t he r w i s e no t ed) p a r a m e t er s y m b ol l i m it u n it dr a i n - s o u r c e v o l t a ge v ds 30 g a t e - s o u r c e v o l t a ge v gs 20 v c o n t i nu o u s dr a i n c u rr e nt i d 12 p u l s e d dr a i n c u rr e n t i dm 48 a t a = 25 o c 2 . 5 m a x i m u m p o w e r d i ss i p a t i on t a = 75 o c p d 1 . 2 w o p e r a t i ng j un c t i o n a nd s t o r a g e t e m p e r a t u r e r a nge t j , t s tg - 55 t o 150 o c a v a l a n c h e e n e r g y w i t h s i ng l e p u l se eas 150 m j j un c t i o n - t o -c a s e t h e r m a l r e s i s t a n c e r q jc 25 j un c t i o n - t o - a m b i e n t t h e r m a l r e s i s t a n c e ( p c b m o un t e d ) r q ja 50 o c / w d d d d s s s g 8 7 6 5 1 2 3 4 30v n-channel enhancement mode mosfet PT4410 1 date:2011/05 www.htsemi.com semiconductor jinyu
e l e c t r i c a l ch a r a c t e r i s t i cs p a r a m e t er s t a t ic dr a i n - s o u r c e b r ea k d o w n v o l t a ge bv d ss v gs = 0 v , i d = 250u a 30 v dr a i n - s o u r c e o n - s t a t e r e s i s t a n ce r d s ( on) v gs = 4 . 5 v , i d = 12 a 1 1 . 0 15 . 0 dr a i n - s o u r c e o n - s t a t e r e s i s t a n ce r d s ( on) v gs = 10 v , i d = 12 a 8 . 5 10 . 5 m w g a t e t h r e s h o l d v o l t a ge v g s ( t h) v ds =v gs , i d = 250u a 1 1 . 8 3 v z e r o g a t e v o l t a g e dr a i n c u rr e nt i d ss v ds = 24 v , v gs = 0 v 1 u a g a t e b o d y l ea k a ge i g ss v gs = 20 v , v ds = 0 v 100 n a f o r w a r d t r a n s c o ndu c t a n ce g fs v ds = 15 v , i d = 12 a 64 s d y n a m ic t o t a l g a t e c h a r ge q g 12 45 g a t e - s o u r c e c h a r ge q gs 4 . 5 g a t e -dr a i n c h a r ge q gd v ds = 15 v , i d = 12 a v gs = 5 v 3 . 6 n c t u r n - o n d e l a y t i me t d ( on) 22 35 t u r n - o n r i s e t i me t r 13 20 t u r n - o f f d e l a y t i me t d ( o ff) 82 125 t u r n - o f f f a ll t i me t f v dd = 15 v , r g = 6 ! i d = 1 a , v gs = 10 v 30 45 n s i npu t c a p a c i t a n ce c iss 1 180 o u t pu t c a p a c i t a n c e c o ss 270 r e v e r s e t r a n s f e r c a p a c i t a n ce c r ss v d s = 15 v , v gs = 0 v f = 1 . 0 m h z 145 p f s o ur ce -d r a i n d i o de m a x . d i o d e f o r w a r d c u rr e n t i s 2 . 0 a d i o d e f o r w a r d v o l t a g e v sd i s = 2 a , v gs = 0 v 1 . 5 v n o t e : p u l s e t e s t: p u l s e w i d t h <= 300u s , du t y c y c l e <= 2% t es t c o nd i t i on u n it max. min. typ. symbol 30v n-channel enhancement mode mosfet PT4410 2 date:2011/05 www.htsemi.com semiconductor jinyu
30v n-channel enhancement mode mosfet PT4410 3 date:2011/05 www.htsemi.com semiconductor jinyu
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