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| geometry process details principal device types cmdd6263 cmkd6263 cmld6263 series cmod6263 cmpd6263 series cmsd6263 series cmud6263e series 1n6263 gross die per 5 inch wafer 210,600 process CPD102X schottky diode high voltage schottky diode chip process epitaxial planar die size 9.0 x 9.0 mils die thickness 5.9 mils anode bonding pad area 4.8 mils diameter top side metalization al - 30,000? back side metalization au - 12,000? www.centralsemi.com r0 (27-september 2010)
process CPD102X typical electrical characteristics www.centralsemi.com r0 (27-september 2010) |
Price & Availability of CPD102X
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