a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue north hollywood, ca 91605 (818) 982 - 1200 fax (818) 765 - 3004 1/1 specifications are subject to change without notice. characteristics t c = 25 o c symbol none test conditions minimum typical maximum units bv ceo i c = 50 ma 36 v bv ces i c = 50 ma r be = 10 w 18 v bv ebo i e = 10 ma 4.0 v i cbo v cb = 15 v 5 ma h fe v ce = 5.0 v i c = 1.0 a 5 200 --- c ob v cb = 12.5 v f = 1.0 mhz 80 pf p g h h c v ce = 12.5 v p out = 45 w f = 836 mhz 4.7 35 db % npn silicon rf power transistor UHBM45 description: the asi UHBM45 is designed for features: omnigold ? metalization system maximum ratings i c 9.0 a v cbo 36 v v ceo 18 v v ces 36 v v ebo 4.0 v p diss 150 w @ t c = 25 o c t j - 65 o c to +200 o c t stg - 65 o c to +150 o c q q jc 1.2 o c/w package style .230 6l flg order code: asi10667 minimum inches / mm .115 / 2.92 .225 / 5.72 .075 / 1.91 .090 / 2.29 .720 / 18.29 b c d e f g a maximum .085 / 2.16 .110 / 2.79 .730 / 18.54 .235 / 5.97 inches / mm .125 / 3.18 h .355 / 9.02 dim k l i j .004 / 0.10 .120 / 3.05 .230 / 5.84 .006 / 0.15 .130 / 3.30 .260 / 6.60 k 4x .025 r .040x45 .115 i .125 e .430 d h g f j c a b 2x?.130 l .160 / 4.06 .180 / 4.57 .980 / 24.89 .970 / 24.64 .355 / 9.02 .365 / 9.27 .365 / 9.27
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