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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3719 DESCRIPTION *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 800V (Min) *High Switching Speed *Wide Area of Safe Operation APPLICATIONS *Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w MAX 1200 800 7 5 8 3 UNIT V .cn mi e V V IC Collector Current-Continuous A ICM Collector Current-Peak A IB B Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature A PC 150 W Tj 175 Tstg Storage Temperature Range -65~175 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3719 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 2.0 V hFE DC Current Gain IC= 2A; VCE= 5V 6 20 ICBO Collector Cutoff Current VCB= 1000V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 Switching Times ton Turn-On Time tstg Storage Time tf Fall Time w w scs .i w .cn mi e 0.1 mA 1.0 s IC= 2A; IB1= 0.4A; IB2= -0.8A; VCC= 250V 3.5 s 0.3 s isc Websitewww.iscsemi.cn |
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