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| DC COMPONENTS CO., LTD. R MJE2955T DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier and switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405(10.28) .380(9.66) .185(4.70) .173(4.40) .151 Typ .055(1.39) (3.83) .045(1.15) .295(7.49) .220(5.58) Absolute Maximum Ratings(TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o o C) Rating -70 -60 -5 -10 -6 75 +150 -55 to +150 Unit V V V A A W o o .625(15.87) .570(14.48) 123 Symbol VCBO VCEO VEBO IC IB PD TJ TSTG .350(8.90) .330(8.38) .640 Typ (16.25) .055(1.40) .045(1.14) .037(0.95) .030(0.75) .562(14.27) .500(12.70) .100 Typ (2.54) .024(0.60) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO ICEX ICEO IEBO VCE(sat)1 VCE(sat)2 VBE(on) hFE1 hFE2 fT 380s, Duty Cycle 2% Min -70 -60 -5 20 5 2 Typ - Max -1 -1 -0.7 -5 -1.1 -8 -1.8 100 - Unit V V V mA mA mA mA V V V - Test Conditions IC=-10mA, IE=0 IC=-200mA, IB=0 IE=-1mA, IC=0 VCB=-70V, IE=0 VCE=-70V, VEB(off)=-1.5V VCE=-30V, IB=0 VEB=-5V, IC=0 IC=-4A, IB=-400mA IC=-10A, IB=-3.3A IC=-4A, VCE=-4V IC=-4A, VCE=-4V IC=-10A, VCE=-4V Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1) DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width MHz IC=-500mA, VCE=-10V, f=0.5MHz |
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