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| TPR175 NPN SILICON RF-MICROWAVE POWER TRANSISTOR DESCRIPTION: The ASI TPR175 is a common base transistor Designed for pulsed systems in the frequency band 1030-1090 MHz. PACKAGE STYLE FEATURES: * Common Base * Internal Matching Network * PG = 8.0 dB at 175 W/1090 MHz * OmnigoldTM Metalization System MAXIMUM RATINGS IC VCES VEBO PDISS TJ TSTG JC 12.5 A 55 V 3.5 V 388 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.45 C/W 1 = Collector 2 = Base 3 = Emitter CHARACTERISTICS SYMBOL BVCES BVEBO hFE PG VSRW C IC = 20 mA TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 55 3.5 UNITS V V --- IE = 5.0 mA VCE = 5.0 V VCE = 50 V IC = 20 mA POUT = 175 W f = 1090 MHz 10 8.0 9.0 00:1 40 dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1 |
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