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| PT3642 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT3642 is Designed for Class A,B,C Amplifier, Oscillator and Driver Applications Covering 130 to 400MHz. PACKAGE STYLE TO- 60 FEATURES INCLUDE: * Emitter Ballasted * Common Emitter Package MAXIMUM RATINGS IC VCE PDISS TJ TSTG JC 3.0 A 40 V 23 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 7.6 C/W 1 = EMITTER 3 = COLLECTOR 2 = BASE CASE = EMITTER CHARACTERISTICS SYMBOL BVCEO BVCEX BVCBO ICEO IEBO hFE Cob ft Pout GP C TC = 25 C TEST CONDITIONS IC = 200 mA IC = 200 mA IC = 500 A VCE = 30 V VEB = 4.0 V VCE = 5.0 V VCB = 30 V VCE = 28 V IC = 150 mA IC = 1.0 A f = 1.0 MHz f = 100 MHz VBE = -1.5 V MINIMUM TYPICAL MAXIMUM 40 65 65 250 250 5.0 20 400 13.5 5.8 70 UNITS V V V A A --pF MHz W dB % VCE = 28 V f = 175 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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