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| 1N914 SMALL SIGNAL DIODE DO-35 FEATURES Silicon Epitaxial Planar Diode min. 1.083 (27.5) For general purpose and switching. max. .079 (2.0) max. .150 (3.8) Cathode Mark min. 1.083 (27.5) MECHANICAL DATA Case: DO-35 Glass Case Weight: approx. 0.13 g max. .020 (0.52) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified. SYMBOL VALUE UNIT Peak Reverse Voltage Maximum Average Rectified Current Maximum Power Dissipation at Tamb = 25 C Maximum Junction Temperature Maximum Forward Voltage Drop at IF = 10 mA Maximum Reverse Current at VR = 20 V VR = 75 V Max. Reverse Recovery Time at IF = IR = 10 mA, VR = 6 V, RL = 100 , to Irr = 1 mA Maximum Capacitance at VR=0, f=1.0 MHZ VRM Io Ptot Tj VF IR 100 75 500 200 1.0 25 5.0 4.0 4.0 V mA mW C V nA A ns pF trr Ctot 11/09/98 |
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