| PART |
Description |
Maker |
| GS78108A |
8Mb Async SRAMs
|
GSI Technology
|
| CY7C182 7C182 CY7C182-45PC CY7C182-25PC CY7C182-25 |
Memory : Async SRAMs
8Kx9 Static RAM
From old datasheet system
|
CYPRESS[Cypress Semiconductor]
|
| CY7C1049BV33-25ZC CY7C1049BV33L-12VC CY7C1049BV33L |
GIGATRUE 550 CAT6 MOLDED COMPONENT, RED 5FT 512K X 8 STANDARD SRAM, 17 ns, PDSO44
512K x 8 Static RAM
Memory : Async SRAMs
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| ADN2817ADN2818 ADN2818ACP-RL ADN2818ACP-RL7 ADN281 |
Continuous Rate 12.3Mb/s to 2.7Gb/s Clock and Data Recovery ICs
Continuous Rate 12.3Mb/s to 2.7Gb/s Clock and Data Recovery IC (With High Sensitivity Limiting Amp)
|
AD[Analog Devices]
Analog Devices, Inc.
|
| IS66WVE1M16BLL-55BLI IS66WVE1M16BLL-70BLI |
3.0V Core Async/Page PSRAM
|
Integrated Silicon Solution, Inc
|
| IS66WVE1M16ALL-70BLI |
1.8V Core Async/Page PSRAM
|
Integrated Silicon Solution, Inc
|
| GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MBS /双氰胺同步突发静态存储器
DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35
(GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| MT45W8MW16BGX |
8MEG X 16 Async/Page/Burst CellularRAM Memory
|
Micron Technology
|
| GS816273C-250 GS816273C-250I GS816273C-225 GS81627 |
18Mb Burst SRAMs
256K x 72 18Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| CY7C1020CV26-15ZSXE CY7C1020CV26-15ZSXET |
512Kb (32K x 16) Static RAM
Async SRAM; Density: 512 Kb; Organization: 32Kb x 16; Vcc (V): 2.5 to 2.7 V;
|
CYPRESS SEMICONDUCTOR CORP
|
| IDT71V65803S133BG IDT71V65803S100BQ IDT71V65803S10 |
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 3.8 ns, PQFP100
256K x 36/ 512K x 18 3.3V Synchronous ZBT SRAMs
RECTIFIER FAST-RECOVERY SINGLE 1A 100V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 1K/BULK
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
