| PART |
Description |
Maker |
| TB300-HDB10P-BAC TB200-HDW10P-BAC TB200-HDB10P-BAC |
Patented, Absorption Infrared Gas sensing engine provides high accuracy in a compact low cost package.
Patented, Absorption Infrared Gas sensing engine provides high accuracy in a compact low cost package.
|
Amphenol Corporation
|
| IQS6201DNR IQS6202DNR IQS6203DNR IQS6204DNR IQS620 |
Unique combination of sensing:Capacitive sensing
|
List of Unclassifed Man...
|
| IR2170 IR2170S |
Current Sensing IC in a 8-lead SOIC package
Current Sensing IC in a 8-pin DIP package
OVER CURRENT SENSING IC
|
IRF[International Rectifier]
|
| TC9243APG TC9243AFG |
Infrared Remote-Control Signal Transmission LSI
|
http://
Toshiba Semiconductor
|
| FXLA102 FXLA102L8X |
Low Voltage Dual Supply 2-Bit Voltage Translator with Configurable Voltage Supplies and Signal Levels, 3-State Outputs, and Auto Direction Sensing
|
Fairchild Semiconductor
|
| TC9243F TC9243P E005443 TC9243 |
INFRARED REMOTE CONTROL SIGNAL TRANSMISSION LSI
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| QED123 QED122 QED121 QED122A3R0 |
PLASTIC INFRARED LIGHT EMITTING DIODE 4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| AA3528AF3C |
2.4 mm, 1 ELEMENT, INFRARED LED, 940 nm
3.5x2.8 mm INFRARED EMITTING DIODE
|
Kingbright Corporation
|
| 1N6266 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| MC14497P |
Digital Signal Processor,Military Known Good Die 0-XCEPT -55 to 125 INFRARED, TRANSMITTER IC, PDIP18
PCM Remote Control Transmitter
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
|
| MTE100 MTE1100 |
GaAs INFRARED EMITTER INFRARED LED FOR PHOTO SENSOR
|
Marktech Optoelectronics
MARKTECH[Marktech Corporate]
|
