| PART |
Description |
Maker |
| MG50Q2YS9 MG100M2CK1 MG200H2CK1 GT60M103 MG400H1FK |
50 A, 1200 V, N-CHANNEL IGBT
100 A, 880 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
200 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
150 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
400 A, 600 V, N-CHANNEL IGBT
|
|
| PHD18NQ10T PHP18NQ10T PHB18NQ10T PHB18NQ20T |
N-channel TrenchMOS(tm) transistor
N-channel TrenchMOS TM transistor
N-channel TrenchMOS transistor 18 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET
|
http://
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| BSS125 Q67000-S233 Q62702-S021 Q67000-S008 BSS125Q |
N-Channel SIPMOS Small-Signal Transistor
SIPMOS ? Small-Signal Transistor
16 Characters x 1 Lines, 5x7 Dot Matrix Character and Cursor
Transient Voltage Suppressor Diodes
SIPMOS Small-Signal Transistor (N channel Enhancement mode) SIPMOS小信号晶体管N通道增强模式
SIPMOS Small-Signal Transistor (N channel Enhancement mode) 100 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| 2SK160 2SK1600 |
FIELD EFFECT TRANSISTOR SILICON N-CHANNEL MOS TYPE
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,3A I(D),TO-220AB
|
Toshiba Semiconductor
Toshiba America Electronic Components, Inc.
|
| STD6N10 STD6N10-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-251
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
| MTH8N90 |
TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,8A I(D),TO-218AC
POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS
|
MOTOROLA[Motorola, Inc]
|
| IFN5912 IFN5911 |
TRANSISTOR | JFET | N-CHANNEL | 7MA I(DSS) | TO-78 晶体管|场效应| N沟道|mA我（直）|8
N-Channel Dual Silicon Junction Field-Effect Transistor
|
InterFET, Corp.
InterFET Corporation
|
| BUZ102SL-4 |
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 6.2 A, 55 V, 0.033 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
SIPMOS ? Power Transistor
Quad-Channel SIPMOS Power Transistor
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| PSMN025-100D PSMN025-100D_2 |
N-channel TrenchMOS? transistor
N-channel TrenchMOS transistor(N沟道 TrenchMOS晶体
N-channel TrenchMOS transistor
From old datasheet system
N-channel TrenchMOS(tm) transistor
|
NXP Semiconductors
Philips Semiconductors
|
| FX6ASH03 FX6ASH06 FX6VSH03 FX6KMH03 FX6SMH06 FX6UM |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 3A条（丁）|52AA
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 30A条（丁）|63AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 3A条（丁）|63AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 30A I(D) | SOT-186 晶体管| MOSFET的| P通道| 30V的五（巴西）直| 30A条（丁）|的SOT - 186
|
Renesas Electronics, Corp.
NXP Semiconductors N.V.
|
| BUZ70L C67078-S1325-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) SIPMOS功率晶体管（N通道增强模式雪崩级逻辑电平
From old datasheet system
SIPMOS ? Power Transistor
N-Channel SIPMOS Power Transistor
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
