| PART |
Description |
Maker |
| HCPL-6250 HCPL-625K HCPL-625X 5962-8876801PA 5962- |
Hermetically Sealed. Low If. Wide Vcc. Logic Gate Optocouplers 密封。如果低。宽的VCC。逻辑门光电耦合
HCPL-523K-300 · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
HCPL-523K-100 · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876904KXA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
HCPL-520K-100 · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
HCPL-520K-300 · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876802KPC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876802KXA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876801PC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876802KPA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876901PA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876801PA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876801XA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876801YA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876801YC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876802KYA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876802KYC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876901PC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876901XA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876901YA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876901YC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-88769022A · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876903FC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876904KPA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876904KPC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876904KYA · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876904KYC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876905K2A · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
5962-8876906KFC · Hermetically Sealed, Low If, Wide Vcc, Logic Gate Optocouplers
|
Avago Technologies, Ltd.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| APL5522KAC-TRG APL5522KC-TRG |
Dual-Channel, 3.3V/500mA and 2.5V/500mA Linear Regulator
|
Anpec Electronics Corop...
|
| 206-501-22-38 206-521-22-38 206-532-22-38 206-930- |
LED MINIATUR FLANSCHSOCKEL 24V GELB
LED MINIATUR FLANSCHSOCKEL 24V BLAU
LED MINIATUR FLANSCHSOCKEL 24V GRUEN 发光二极管微缩FLANSCHSOCKEL 24V的格
LED MINIATUR FLANSCHSOCKEL 24V ROT 发光二极管微缩FLANSCHSOCKEL 24V的腐
|
Marl International Limited
|
| LT3029MPMSE LT3029IDE LT3029IDEPBF LT3029IDETR LT3 |
Dual 500mA/500mA Low Dropout, Low Noise, Micropower Linear Regulator
|
Linear Technology
|
| MAX6456UT MAX6453UT MAX645310 MAX6454UT MAX6455UT |
uP Supervisors with Separate VCC Reset and Manual Reset Outputs
µP Supervisors with Separate VCC Reset and Manual Reset Outputs 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO6
|
ON Semiconductor
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
Maxim Integrated Produc...
|
| MC78M12ABT MC78M09BDT MC78M09BDTRK MC78M05BDTRK MC |
500mA, 12V, Positive Voltage Regulator
500mA, 9V, Positive Voltage Regulator
500mA, 5V, Positive Voltage Regulator
500mA, 18V, Positive Voltage Regulator
500mA, 8V, Positive Voltage Regulator
500mA, 15V, Positive Voltage Regulator
500mA, 6V, Positive Voltage Regulator
|
ON Semiconductor
|
| MAX6754UKLD0-T MAX6755UKLD0-T MAX6756UKLD0-T MAX67 |
Vcc: 5.0 V, active timeout period: 0.02 ms, low-power single/dual-voltage window detector
Vcc: 3.0 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector
Vcc: 5.0 V, active timeout period: 100 ms-320 ms, low-power, single/dual-voltage window detector
Vcc: 5.0 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 2.5 V, Vcc:1.8 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 3.3 V, Vcc: 1.8 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 3.3 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector
Vcc: 3.3 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 1.8 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector
Vcc: 3.0 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 1.8 V, Vcc:adj, active timeout period:185 ms, low-power single/dual-voltage window detector
|
MAXIM - Dallas Semiconductor
|
| M38230G4-XXXFP M38230G4-XXXHP M38231G4-XXXHP M3823 |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| CECWP2G272M2-L22 CECWP2G392M3-L22 CECWP2G102M1-L22 |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 2700 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 3900 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 1000 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 330 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 2200 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 1200 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 5600 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 1800 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 3300 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 560 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 470 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 1500 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 390 uF, CHASSIS MOUNT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400 V, 4700 uF, CHASSIS MOUNT
|
Nippon Chemi-con, Corp.
|
| CENW51 CENW57 CENW51A CENW55 CENW56 CENW92 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1A I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 500MA I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1A I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 500MA I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 500MA I(C) | TO-237VAR 晶体管|晶体管|进步党| 300V五（巴西）总裁| 500mA的一（c）|37VAR
|
SMSC, Corp.
|
| HCS360 HCS360-ISN HCS360-SN HCS360-IP MICROCHIPTEC |
IC AC/DC CONV 15V 200MA SIP12
IC AC/DC CONV -12V 300MA SIP12
IC CONV AC/DC -12V 500MA SIP12 而Keeloq跳码编码
IC AC/DC CONV 24V 200MA SIP12 而Keeloq跳码编码
|
Microchip Technology Inc.
Microchip Technology, Inc.
|
| SDR8400S4 |
400 AMPS 400 - 1200 VOLTS 15 usec STANDARD RECOVERY HIGH CURRENT RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
|
