| PART |
Description |
Maker |
| STD100N3LF3 |
N-channel 30 V, 0.0045 Ohm typ., 80 A STripFET(TM) II Power MOSFET in a DPAK package
|
ST Microelectronics
|
| S6846 S10053 S6809 |
MOSFET, Switching; VDSS (V): 600; ID (A): 11; Pch : -; RDS (ON) typ. (ohm) @10V: 0.58; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1450; toff (µs) typ: -; Package: LDPAK (S)- (1)
Light modulation photo IC 光调制照片集成电
|
Hamamatsu Photonics
|
| S7686 |
MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 10.8; Package: DPAK (L)- (2)
|
Hamamatsu Photonics
|
| FDP7045 FDP7045L FDB7045L |
N-Channel Logic Level PowerTrench MOSFET 75 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Logic Level PowerTrench MOSFET 75 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| BSZ033N03LSCG |
20 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INFINEON TECHNOLOGIES AG
|
| GWM120-0075P3 |
Three phase full bridge with Trench MOSFETs in DCB isolated high current package 125 A, 75 V, 0.0045 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
| IRFS3207PBF IRFB3207PBF IRFSL3207PBF |
High Efficiency Synchronous Rectification in SMPS
75 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
75 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
HEXFET?Power MOSFET
HEXFET㈢Power MOSFET
High Efficiency Synchronous Rectification in SMPS
|
International Rectifier
|
| STF11NM65N STFI11NM65N STD11NM65N STP11NM65N |
N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in I2PAKFP package
N-channel 650 V, 0.425 Ω typ., 11 A MDmesh?II Power MOSFET in DPAK, TO-220FP, I2PAKFP and TO-220 packages
N-channel 650 V, 0.425 ohm typ., 11 A MDmesh ll Power MOSFET
N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package
|
STMicroelectronics
ST Microelectronics
|
| NP80N04PLG NP80N04PLG-E1B-AY NP80N04PLG-E2B-AY NP8 |
MOS FIELD EFFECT TRANSISTOR
80 A, 40 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN
SWITCHING N-CHANNEL POWER MOS FET
|
Renesas Electronics Corporation
|
| STW88N65M5 STWA88N65M5 |
N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 package
N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 long leads package
|
ST Microelectronics
|
| STW57N65M5 STI57N65M5 STP57N65M5 STB57N65M5 |
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh(TM) V Power MOSFET in D2PAK package
N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET
N-channel 650 V, 0.056 Ω typ., 42 A MDmesh V Power MOSFET in I2PAK, TO-220, TO-220FP and D2PAK packages
|
ST Microelectronics
STMicroelectronics
|
|
