| PART |
Description |
Maker |
| 1SS399 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
| 1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
| BAW56S Q62702-A1253 SIEMENSAG-Q62702-A1253 |
Silicon Switching Diode Array (For high-speed switching applications Common anode) 4 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 1SS199 1SS199MHD |
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching 硅肖特基二极管各种探测器，高速开
Silicon Schottky Barrier Diode for Various Detector High Speed Switching
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| HSU226 |
Diodes>Switching
Silicon Schottky Barrier Diode for High Speed Switching
|
RENESAS[Renesas Electronics Corporation]
|
| 1SS426 |
Switching diode
Ultra-High Speed Switching Applications
|
Toshiba Semiconductor
|
| Q62702-A1097 BAV70S Q62702-A109 |
From old datasheet system
Silicon Switching Diode Array (For high speed switching applications Common cathode)
|
SIEMENS[Siemens Semiconductor Group]
|
| BAV99W Q62702-A1051 |
From old datasheet system
Silicon Switching Diode Array (Connected in series For high speed switching applications)
|
Siemens Semiconductor Group
Infineon
|
| RD0506T-H RD0506T-TL-H RD0506T12 ENA1574B |
Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode
|
Sanyo Semicon Device
|
