| PART |
Description |
Maker |
| ZUS1R51212 ZUS1R51205 ZUS1R50512 ZUS1R50515 ZUS1R5 |
UL recognized, TV approved, CSA certified
|
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
|
| ZUS31205 |
UL recognized, TV approved, CSA certified, Isolated between input-output
|
List of Unclassifed Manufacturers
|
| ECK-DNA222ME ECKDNA221 ECKDNA221KB ECKDNA222 ECKDN |
Ceramic Disc Capacitors for Safety Regulations The Type NS-A is recognized by UL and CSA
|
Panasonic Semiconductor
Panasonic Battery Group
|
| CY7C1297H-133AXC |
1-Mbit (64K x 18) Flow-Through Sync SRAM; Architecture: Standard Sync, Flow-through; Density: 1 Mb; Organization: 64Kb x 18; Vcc (V): 3.1 to 3.6 V
|
CYPRESS SEMICONDUCTOR CORP
|
| PIC16F785 |
The PIC16F785 Flash microcontroller offers all of the advantages of the well recognized mid-range x14 architecture with standardized ...
|
Microchip
|
| IDT71V2577S75PF IDT71V2577S75PFI IDT71V2577YS75PF |
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect
3.3V 256K x 18 Synchronous Flow-Through SRAM w/2.5V I/O
|
IDT[Integrated Device Technology]
|
| IDT71T75902 71T75702_DS_59004 IDT71T75902S80PF IDT |
2.5V 1M x 18 ZBT Synchronous 2.5V I/O Flow-through SRAM
From old datasheet system
512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs
|
IDT
|
| IDT71V433 IDT71V433S11PF IDT71V433S11PFI IDT71V433 |
From old datasheet system
32K x 32 3.3V Synchronous SRAM Flow-Through Outputs
32K X 32 Flow-Through Ouputs SRAM
|
Integrated Device Technology
IDT
|
| C981U222KWDBA7317 C981U222MWDBA7317 C981U222KWDAA7 |
Safety Standard Recognized, 900 Series, Encapsulated, AS Type, X1 760 VAC/Y1 500 VAC (Industrial Grade)
|
Kemet Corporation
|
| MT55L128L32P1 MT55L256V18P1 MT55L256L18P1 MT55L128 |
3.3V I/O28K x 32，Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器)
2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18，流量通过ZBT SRAM的电压（3.3V输入/输出Mb的流通式同步静态存储器
3.3V I/O28K x 36，Flow-Through ZBT SRAM(3.3V或输输出,4Mb流通式同步静态存储器) 3.3V的I / O28K的36，流量通过ZBT SRAM的电压（3.3V或输输出Mb的流通式同步静态存储器
2.5V I/O28K x 32，Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 2.5VI / O28K的32，流量通过ZBT SRAM的电压（2.5V输入/输出Mb的流通式同步静态存储器
|
Micron Technology, Inc.
|
