| PART |
Description |
Maker |
| ESD9X3.3ST5G |
ESD Protection Diodes In Ultra Small SOD-923 Package 102 W, UNIDIRECTIONAL, SILICON, TVS DIODE
|
ON Semiconductor
|
| EMIF10-COM01 |
EMI滤波器包括静电放电保
±15kV ESD Protected, 3.3V, Full Fail-safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers; Temperature Range: -40°C to 85°C; Package: 8-MSOP
EMI FILTER INCLUDING ESD PROTECTION
EMI FILTER INCLUDING ESD PROTECTION
|
STMicroelectronics
ST Microelectronics
|
| NTK3142PT5G NTK3142PT1G NTK3142P |
Small Signal Power MOSFET -20 V, -280 mA, P-Channel with ESD Protection, SOT-723
Small Signal MOSFET ?0 V, ?80 mA, P?Channel with ESD Protection, SOT?23
|
Rectron Semiconductor
|
| CSPEMI306AG CSPEMI306A |
6 Channel EMI Filter Array with ESD Protection 6通道EMI滤波器与ESD保护阵列
6 Channel EMI Filter (30dB @ 900MHz) with ESD Protection @ ±15KV (IEC61000-4-2 Level 4 Contact Discharge), Chip Scale Package
|
California Micro Devices Corporation
CALMIRCO[California Micro Devices Corp]
|
| 2N7002KW |
N-Ch Small Signal MOSFET with ESD Protection
|
SeCoS Halbleitertechnologie GmbH
|
| ESD11A5.0DT5G ESD11A3.3DT5G |
5V mid capacitance TVS in SOT-1123 UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
Transient Voltage Suppressors ESD Protection Diodes in Ultra Small SOT−1123 Package
|
ON Semiconductor
|
| DF3A3.3FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.47 to 13.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A8.2FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF5A3.6CFU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.21 to 21.08; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba Corporation
Toshiba Semiconductor
|
| NTJD4401NT1 NTJD4401N06 NTJD4401NT1G NTJD4401NT2 N |
Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
|
ONSEMI[ON Semiconductor]
|
| ESDA6V1-5P6 DSDA6V1-5P6 |
TRANSIL ARRAY FOR ESD PROTECTION
TRANSIL⑩ ARRAY FOR ESD PROTECTION
TRANSIL ARRAY FOR ESD PROTECTION
TRANSILARRAY FOR ESD PROTECTION
SUPPORT
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
