| PART |
Description |
Maker |
| IXYJ20N120C3D1 |
1200V XPTTM IGBT
|
IXYS Corporation
|
| IXXH40N65B4H1 |
XPTTM 650V IGBT
|
IXYS Corporation
|
| IXYH40N120B3D1 |
1200V XPTTM IGBT GenX3TM w/ Diode
|
IXYS Corporation
|
| IRG4PF50WD |
900V Warp 20-100 kHz Copack IGBT in a TO-247AC package
|
International Rectifier
|
| IRFPF30 |
900V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
HEXFET? Power MOSFET
Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 900V，的Rds（on）\u003d 3.7ohm，身份证\u003d 3.6A
|
International Rectifier, Corp.
|
| FQAF11N90C |
900V N-Channel Advance Q-FET C-series
900V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQPF9N90C FQP9N90C |
900V N-Channel Advance Q-FET C-Series
900V N-CHANNEL MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFIBF30G IRFIBF30GPBF |
900V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=1.9A)
|
IRF[International Rectifier]
|
| FQI3N90 FQB3N90 FQB3N90TM FQI3N90TU |
900V N-Channel MOSFET(漏源电压900V的N沟道增强型MOSFET)
900V N-Channel QFET
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IXXK200N60C3 |
XPTTM 600V IGBTs
|
IXYS Corporation
|
| IXYK120N120C3 |
1200V XPTTM IGBTs GenX3TM
|
IXYS Corporation
|
