| PART |
Description |
Maker |
| XD1005-QT-EV1 XD1005-QT-0G00 MIMIXBROADBANDINC.-XD |
10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN 10000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN 10.0-40.0千兆赫的GaAs MMIC分布式放大器QFN封装
|
Mimix Broadband, Inc.
|
| NGA-386 |
DC-5000 MHz, cascadable 50 ohm (1.2:1 VSWR) GaAs HBT MMIC amplifier. High gain: 18.9 at 1950MHz.
DC-5000 MHz, Cascadable GaAs HBT MMIC Amplifier
|
STANFORD[Stanford Microdevices]
|
| Q62702-G44 CGY120 CGY120E6763 |
From old datasheet system
GaAs MMIC (Monolithic microwave IC MMIC-Amplifier for mobile communication)
MMIC-Amplifier for GSM/PCN
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| MGFC36V7177A |
7.1 - 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| TC2998E |
2.5-2.7GHz 20W Packaged GaAs Power FETs
|
Transcom, Inc.
|
| UPG2022T5G |
HIGH POWER GaAs MMIC SPDT SWITCH
|
CEL
|
| HMC402MS8E HMC402MS808 |
HIGH IP3 GaAs MMIC MIXER, 1.8 - 2.2 GHz
|
Hittite Microwave Corporation
|
| XU1009-BD XU1009-BD-EV1 XU1009-BD-000V |
18.0-36.0 GHz GaAs MMIC Transmitter SPECIALTY TELECOM CIRCUIT, UUC12
18.0-36.0 GHz GaAs MMIC Transmitter 18.0-36.0 GHz的砷化镓单片发射
|
Mimix Broadband, Inc.
|
| MGFC39V7177A |
7.1 - 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET 7.1 - 7.7GHz波段8瓦特内部匹配砷化镓场效应
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| SSW-224 SSW224 |
DC-6 GHZ HIGH ISOLATION SPDT GAAS MMIC SWITCH
|
STANFORD[Stanford Microdevices]
|
