| PART |
Description |
Maker |
| PNP3055E |
PowerMOS transistor. Drain-source voltage 60 V. Drain current(DC) 12 A.
|
Philips
|
| IRF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A.
|
General Electric Solid State
|
| HCF4000 HCF4000B HCF4001 HCF4001B HCF4002 HCF4002B |
NOR GATE
(289.19 k)
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,6A I(D),TO-3 RoHS Compliant: Yes
T-PNP-SI-AF PO- .75W
T-NPN- SI-PO & SW-PD 40 W 或非
MOSFET-PWR N-CH HI SPEED 或非
MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:10.5A; On-Resistance, Rds(on):0.3ohm; Package/Case:3-TO-220; Continuous Drain Current - 100 Deg C:7.5A; Continuous Drain Current - 25 Deg C:10.5A 或非
MOSFET-PWR 800V 4A 或非
NOR GATE 或非
MOSFET-PWR 500V 8A
|
ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| AM29LV017D-120WCI AM29LV017D-120EC AM29LV017D-120W |
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:DPAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On-Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Continuous Drain Current - 100 Deg C:66A; Continuous Drain Current - 25 Deg C:93A RoHS Compliant: Yes
x8 Flash EEPROM
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package x8闪存EEPROM
|
Advanced Linear Devices, Inc.
|
| AP1623SLA AP1623 AP1623S AP1623SA AP1623SL |
Diodes, Zener; Zener Voltage Typ, Vz:12V; Vz Test Current, Izt:20mA; Power Dissipation, Pd:500mW; Package/Case:41-MiniDIP; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Peak Reflow Compatible (260 C):Yes
JFET; Transistor Polarity:Dual N Channel; Breakdown Voltage, V(br)gss:-40V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:10mA; Gate-Source Cutoff Voltage Max, Vgs(off):-2.5V
PWM Control Step-Down Switching Regulator-Converter
|
ETC
ANACHIP[Anachip Corp]
|
| 24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR |
MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护
MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No
MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes
(ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
16/8/4/2/1KbitSerialICBusEEPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| 2SK1603 |
Drain Current ?ID= 2.5A@ TC=25C
|
Inchange Semiconductor ...
|
| 2N20 |
Drain Current ID= 2A@ TC=25C
|
Inchange Semiconductor ...
|
| 2SK752 |
Drain Current ?ID= 3A@ TC=25C
|
Inchange Semiconductor ...
|
| 2SK1211 |
Drain Current ?ID=2.5A@ TC=25C
|
Inchange Semiconductor ...
|
