| PART |
Description |
Maker |
| PC846 |
Hgh -w=der Vtige, Hgh Density Mounting Type Photocoupler
|
Sharp Electrionic Compo...
|
| 8600V ISPLSI8600V-90LB272 ISPLSI8600V-125LB492 ISP |
3.3V In-System Programmable SuperBIGHigh Density PLD EE PLD, 24 ns, PBGA492
3.3V In-System Programmable SuperBIGHigh Density PLD EE PLD, 24 ns, PBGA272
GT 14C 14#16 SKT RECP LINE EE PLD, 16 ns, PBGA492
3.3V In-System Programmable SuperBIGHigh Density PLD 3.3在系统可编程SuperBIG⑩高密度可编程逻辑器件
3.3V In-System Programmable SuperBIGHigh Density PLD EE PLD, 13.5 ns, PBGA492
|
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| WP06R WP06R12D05 WP06R12D12 WP06R12D15 WP06R12S05 |
High Density 5-6 Watt Wide Input Range DC/DC Converter
5-6 WATT HIGH DENSITY, WIDE INPUT RANGE DC/DC CONVERTER
5-6 WATT HIGH DENSITY/ WIDE INPUT RANGE DC/DC CONVERTER
RECTIFIER SCHOTTKY SINGLE 2A 40V 50A-Ifsm 0.55Vf 0.5A-IR PowerDI-123 3K/REEL
|
CANDD[C&D Technologies]
|
| MACH211SP-12 MACH211SP-7JC MACH211SP-7VC MACH211SP |
RES 35.7K-OHM 1% 0.1W 100PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
SCREW MACHINE SLOTTED 6-32X3/4
High-Density EE CMOS Programmable Logic EE PLD, 16 ns, PQCC44
High-Density EE CMOS Programmable Logic 高密度电子工程CMOS可编程逻辑
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| ISPLSI2192VE100LB144 ISPLSI2192VE100LB144I ISPLSI2 |
3.3V In-System Programmable SuperFAST?High Density PLD
3.3V In-System Programmable SuperFAST?/a> High Density PLD
3.3V In-System Programmable SuperFAST High Density PLD
3.3V In-System Programmable SuperFAST垄芒 High Density PLD
3.3V In-System Programmable SuperFAST⑩ High Density PLD
EE PLD, 13 ns, PQFP128
|
LATTICE SEMICONDUCTOR CORP
|
| ISPLSI5512VA-100LB272 ISPLSI5512VA-70LQ208 5512VA |
70 MHz in-system prommable 3.3V superWIDE high density PLD
In-System Programmable 3.3V SuperWIDE⑩ High Density PLD
In-System Programmable 3.3V SuperWIDE High Density PLD
110 MHz in-system prommable 3.3V superWIDE high density PLD
|
LATTICE[Lattice Semiconductor]
|
| STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(Ｎ沟道增强模式高密度功率ＭＯＳ晶体管) N沟道增强模式“超高密度”功率MOS晶体管（不适用沟道增强模式高密度功率马鞍山晶体管）
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| ISPLSI2032VE06 ISPLSI2032VE300LB49 ISPLSI2032VE300 |
3.3V In-System Programmable High Density SuperFAST⑩ PLD
3.3V In-System Programmable High Density SuperFAST?/a> PLD
3.3V In-System Programmable High Density SuperFAST PLD
3.3V In-System Programmable High Density SuperFAST垄芒 PLD
3.3V In-System Programmable High Density SuperFAST?/a> PLD
3.3V In-System Programmable High Density SuperFAST?PLD
|
Lattice Semiconductor
|
| QL4016-0PG208M QL4016-0PG208M_883 QL4016-0PL84M QL |
QuickRAM Combining Performance, Density and Embedded RAM(性能、密度和嵌入式相结合的QuickRAM系列)
90,000 Usable PLD Gate QuickRAM Combining Performance, Density and Embedded RAM
|
QuickLogic Corp.
List of Unclassifed Manufacturers
|
| LC4128X LC4256ZC-45M132C1 LC4256ZC-75M132C1 LC4032 |
3.3V/2.5V/1.8V在系统可编程超快高密PDLs
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 4.2 ns, PQFP100
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 7.5 ns, PBGA56
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 7.5 ns, PQFP48
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 3.7 ns, PQFP48
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 5 ns, PBGA56
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 5 ns, PQFP48
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs EE PLD, 7.5 ns, PQFP100
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs
|
Lattice Semiconductor Corporation
http://
Lattice Semiconductor, Corp.
|
| SDHD7.5K SDHP7.5K SDHP15K SDHD15K SDHN7.5K |
STANDARD RECOVERY HIGH VOLTAGE DOUBLER AND CENTER TAPS
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压7500V，温5℃时平均整流电流0.4A,高密高电标准恢复倍增整流
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温5℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温25℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
0.8 A, 7500 V, 2 ELEMENT, SILICON, SIGNAL DIODE
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压15000V，温25℃时平均整流电流0.4A,高密高电标准恢复倍增整流 高密度，高电压，标准恢复倍流整流（反向电5000V，温25℃时平均整流电流0.4A，高密度，高电压，标准恢复倍增整流器）
|
Semtech Corporation
Semtech, Corp.
|
