| PART |
Description |
Maker |
| CG2H80030D |
30 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
| CGHV40100P-AMP |
100 W, DC - 4.0 GHz, 50 V, GaN HEMT
|
Cree, Inc
|
| CG2H40010 CG2H40010F CG2H40010P |
10 W, DC - 6 GHz, RF Power GaN HEMT
|
Cree, Inc
|
| MAGX-003135-SB3PPR MAGX-003135-180L00 |
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| MAGX-002735-SB0PPR MAGX-002735-040L00 |
GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| CGHV1F006S-AMP2 CGHV1F006S-AMP3 CGHV1F006S-AMP1 CG |
6 W, DC - 18 GHz, 40V, GaN HEMT
|
Cree, Inc
|
| CGHV27030S |
GaN HEMT
|
CREE
|
| CGH40035F-AMP |
35 W, RF Power GaN HEMT
|
Cree, Inc
|
| TGI1314-50L |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
| CLF1G0035S-100 CLF1G0035-100 |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| CLF1G0060S-30 CLF1G0060-30 |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| TGF2023-10-15 |
50 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
