| PART |
Description |
Maker |
| NTGD1100LT1G NTGD1100LT1 NTGD1100L |
Power MOSFET 8 V, .3 A, Load Switch with Level−Shift, P−Channel, TSOP−6 3300 mA, 8 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Power MOSFET 8 V, ?.3 A, Load Switch with Level−Shift, P−Channel, TSOP−6
Power MOSFET 8 V, ?.3 A, Load Switch with Level−Shift, P−Channel, TSOP−6
|
ONSEMI[ON Semiconductor]
|
| IRLML0040PBF IRLML0040TRPBF IRLML0040PBF-15 |
HEXFETPower MOSFET Load/ System Switch
Industry-standard pinout
|
International Rectifier
|
| IRLML0060PBF IRLML0060TRPBF IRLML0060PBF-15 |
HEXFETPower MOSFET Load/ System Switch
Industry-standard pinout
|
International Rectifier
|
| NTR2101P NTR2101PT1G |
Small Signal MOSFET ?.0 V, ?.7 A, Single P?Channel, SOT?3 High Side Load Switch
|
TY Semiconductor Co., Ltd
|
| LMN200B01 LMN200B01-7 |
200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH PULL DOWN RESISTOR
|
Diodes Incorporated
|
| NTLJD2105L NTLJD2105LTBG |
POWER MOSFET 8 V, 4.3 A, uCool High Side Load Switch with Level Shift, 2x2 mm WDFN Package
|
ON Semiconductor
|
| FDFMA2P85708 FDFMA2P857 |
-20V Integrated P-Channel PowerTrenchMOSFET and Schottky Diode
Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.0A, 120mヘ
Integrated P-Channel PowerTrench庐 MOSFET and Schottky Diode .20V, .3.0A, 120m惟
Integrated P-Channel PowerTrench? MOSFET and Schottky Diode .20V, .3.0A, 120mΩ
|
Fairchild Semiconductor
|
| ITF87068SQT |
9A, 20V, 0.015 Ohm, P-Channel, 2.5V Specified Power MOSFET(9A, 20V, 0.015Ω P沟道2.5V专用功率MOS场效应管)
|
Intersil Corporation
|
| G3VM-21ER G3VM-21BR |
Higher Power, 4A switching with a 20V load, DIP package. Low 20 mΩ ON Resistance.
|
Omron Electronics LLC
|
| PT7A7515 PT7A7513 PT7A7535 PT7A7531 |
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:67A; On-Resistance, Rds(on):7.9mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:D2PAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No
3.08V Reset Active Low Supervisor
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
|
| FDG6332C FDG6332CNL |
Tantalum Molded Capacitor; Capacitance: 220uF; Voltage: 6.3V; Packaging: Tape & Reel 700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
20V N & P-Channel PowerTrench MOSFETs
20V N &P - Channel Power Trench MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRF7534D1 IRF7534D1TR |
-20V FETKY - MOSFET and Schottky Diode in a Micro 8 package
FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.055ohm, Schottky Vf=0.39V)
Co-packaged HEXFET Power MOSFET and Schottky Diode(同封HEXFET晶体管和肖特基二极管)
|
IRF[International Rectifier]
|
|
