| PART |
Description |
Maker |
| IRF640 RF1S640SM FN1585 |
18A, 200V, 0.180 Ohm,, N-Channel PowerMOSFET(18A, 200V, 0.180 Ohm,N娌??澧?己?????OS?烘?搴??)
From old datasheet system
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
|
INTERSIL CORP
|
| IRF640N IRF640NL IRF640NS |
18 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-CHANNEL POWER MOSFETS 200V, 18A, 0.15OHM
N-Channel Power MOSFETs 200V, 18A, 0.15-Ohm
|
FAIRCHILD SEMICONDUCTOR CORP
|
| IRF240 |
18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFET
18A, 200V, 0.180 Ohm, N-Channel Power MOSFET
|
Intersil Corporation
|
| IRF640FP IRF640 |
N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| OM6010CSA |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-254AA 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 18A条（丁）|54AA
|
Diodes, Inc.
|
| IRF640N IRF640NL IRF640NS |
Power MOSFET(Vdss=200V/ Rds(on)=0.15ohm/ Id=18A)
Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)
|
IRF[International Rectifier]
|
| IRF640L IRF640S |
Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=18A)
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
HEXFET? Power MOSFET
|
IRF[International Rectifier]
|
| FDMC8296 |
N-Channel Power Trench? MOSFET 30V, 18A, 8.0mΩ
N-Channel Power Trench㈢ MOSFET 30V, 18A, 8.0mヘ
|
Fairchild Semiconductor
|
| FDMS9620S |
Dual N-Channel PowerTrench? MOSFET Q1: 30V, 16A, 21.5mΩ Q2: 30V, 18A, 13mΩ
Dual N-Channel PowerTrench㈢ MOSFET Q1: 30V, 16A, 21.5mヘ Q2: 30V, 18A, 13mヘ
|
Fairchild Semiconductor
|
| IRF5Y5305CM |
POWER MOSFET P-CHANNEL(Vdss=-55V/ Rds(on)=0.065ohm/ Id=-18A*)
POWER MOSFET P-CHANNEL(Vdss=-55V Rds(on)=0.065ohm Id=-18A*)
POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.065ohm, Id=-18A*)
-55V Single P-Channel Hi-Rel MOSFET in a TO-257AA package
|
IRF[International Rectifier]
|
| FQU630 FQD630 FQD630TM |
200V N-Channel QFET
200V N-Channel MOSFET(N沟道增强型MOS场效应管（漏电流7A, 漏源电压200V，导通电.4Ω
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
|
